Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Trapping of Ce electrons in band gap and room temperature ferromagnetism of Ce4+ doped ZnO nanowires
Rare-earth (RE) metal doped ZnO nanowires have been fabricated through a simple, quick, and versatile low temperature soft chemical method. The average length and diameter of nanowires lie in range of...
Next Article
The nanoindentation applied to predict the interface delamination for the C/amorphous Si composite film
In the present study, the indentation depth corresponding to the pop-in arising in the loading process is found to be quite close to the C/amorphous Si composite film thickness, regardless of the C-fi...

Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide

J. Appl. Phys. 106, 083516 (2009); doi:10.1063/1.3236627

Published 26 October 2009

You are not logged in to this journal. Log in

A. Benyagoub and A. Audren
CIMAP (ex-CIRIL-GANIL), CEA-CNRS-ENSICAEN-Université de Caen, Bd Henri Becquerel, BP 5133, F-14070 Caen Cedex 5, France
Although silicon carbide has attracted extensive investigations of ion irradiation effects at low energy owing to its potential use in harsh environments, very few works were carried out in the field of ion irradiation at high energy. A recent preliminary study exploring the combination of low and high energy ion irradiation effects in silicon carbide revealed that the damaged layer formed by low energy ion irradiation can undergo an epitaxial recrystallization under subsequent swift heavy ion irradiation. The present paper is devoted to the investigation of the mechanisms at the origin of this phenomenon by performing additional experiments. A detailed analysis of the kinetics of this recrystallization effect demonstrates that the latter cannot be explained by the models proposed for the well-known ion-beam-induced epitaxial crystallization process. Furthermore, it is found that this effect can be accounted for by a mechanism combining the melting within the ion tracks of the amorphous zones through a thermal spike process and their subsequent epitaxial recrystallization initiated from the neighboring crystalline regions wherever the size of the latter surpasses a certain critical value. ©2009 American Institute of Physics
History: Received 17 June 2009; accepted 28 August 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083516/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (648 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 61.80.Jh
    Ion radiation effects
  • 81.40.Ef
    Cold working, work hardening and annealing
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (39)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. W. Palmour, H. S. Kong, and R. F. Davies, Appl. Phys. Lett. 51, 2028 (1987).
  2. J. A. Edmond, K. Das, and R. F. Davis, J. Appl. Phys. 63, 922 (1988).
  3. K. Shenai, R. S. Scott, and B. J. Baliga, IEEE Trans. Electron Devices 36, 1811 (1989).
  4. H. Morkoç, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994).
  5. C. J. McHargue and J. M. Williams, Nucl. Instrum. Methods Phys. Res. B 80-81, 889 (1993).
  6. A. Heft, E. Wendler, T. Bachmann, E. Glaser, and W. Wesch, Mater. Sci. Eng., B 29, 142 (1995).
  7. S. J. Zinkle and L. L. Snead, Nucl. Instrum. Methods Phys. Res. B 116, 92 (1996).
  8. E. Wendler, A. Heft, and W. Wesch, Nucl. Instrum. Methods Phys. Res. B 141, 105 (1998).
  9. W. J. Weber, L. M. Wang, N. Yu, and N. J. Hess, Mater. Sci. Eng., A 253, 62 (1998).
  10. L. Csepregi, E. F. Kennedy, S. S. Lau, J. W. Mayer, and T. W. Sigmon, Appl. Phys. Lett. 29, 645 (1976).
  11. H. G. Bohn, J. M. Williams, C. J. McHargue, and G. M. Begun, J. Mater. Res. 2, 107 (1987).
  12. V. Heera, J. Stoemenos, R. Kögler, and W. Skorupa, J. Appl. Phys. 77, 2999 (1995).
  13. V. Heera, R. Kögler, W. Skorupa, and J. Stoemenos, Appl. Phys. Lett. 67, 1999 (1995).
  14. L. H. Ford, N. S. Hibbert, and D. G. Martin, J. Nucl. Mater. 45, 139 (1972).
  15. R. A. Verrall, M. D. Vlajic, and V. D. Krstic, J. Nucl. Mater. 274, 54 (1999).
  16. A. Benyagoub, A. Audren, L. Thomé, and F. Garrido, Appl. Phys. Lett. 89, 241914 (2006).
  17. A mistake on the swift heavy ion fluence has crept in our previous work (Ref. 16) and the actual fluence was 4×1013  Pb cm−2 instead of 2×1013  Pb cm−2.
  18. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Ranges of Ions in Solids (Pergamon, New York, 1985), Vol. 1.
  19. A. Benyagoub and A. Audren, Nucl. Instrum. Methods Phys. Res. B 267, 1255 (2009).
  20. W. K. Chu, J. W. Mayer, and M. -A. Nicolet, Backscattering Spectrometry (Academic, New York, 1978).
  21. A. Kinomura, A. Chayahara, Y. Mokuno, N. Tsubouchi, and Y. Horino, J. Appl. Phys. 97, 103538 (2005).
  22. I. Golecki, G. E. Chapman, S. S. Lau, B. Y. Tsauer, and J. W. Mayer, Phys. Lett. 71A, 267 (1979).
  23. J. Nakata, M. Takahashi, and K. Kajiyama, Jpn. J. Appl. Phys., Part 1 20, 2211 (1981).
  24. J. Linnros, B. Svensson, and G. Holmen, Phys. Rev. B 30, 3629 (1984).
  25. A. Benyagoub, Phys. Rev. B 72, 094114 (2005).
  26. A. Benyagoub, Nucl. Instrum. Methods Phys. Res. B 266, 2766 (2008).
  27. F. Seitz and J. S. Koehler, Solid State Physics (Academic Press, New York, 1956), Vol. 2, p. 305.
  28. Z. G. Wang, C. Dufour, E. Paumier, and M. Toulemonde, J. Phys.: Condens. Matter 6, 6733 (1994).
  29. G. Szenes, Phys. Rev. B 51, 8026 (1995).
  30. P. Baeri, C. Spinella, and R. Reitano, Int. J. Thermophys. 20, 1211 (1999).
  31. G. Foti, Appl. Surf. Sci. 184, 20 (2001).
  32. L. L. Snead and S. J. Zinkle, Nucl. Instrum. Methods Phys. Res. B 191, 497 (2002).
  33. F. Priolo, C. Spinella, and E. Rimini, Phys. Rev. B 41, 5235 (1990).
  34. F. Gao, W. J. Weber, and R. Devanathan, Nucl. Instrum. Methods Phys. Res. B 191, 487 (2002).
  35. T. Bus, A. van Veen, A. Shiryaev, A. V. Fedorov, H. Schut, F. D. Tichelaar, and J. Sietsma, Mater. Sci. Eng., B 102, 269 (2003).
  36. W. J. Weber, Nucl. Instrum. Methods Phys. Res. B 166–167, 98 (2000).
  37. J. F. Gibbons, Proc. IEEE 60, 1062 (1972).
  38. A. Audren, A. Benyagoub, L. Thomé, and F. Garrido, Nucl. Instrum. Methods Phys. Res. B 266, 2810 (2008).
  39. W. J. Weber, F. Gao, R. Devanathan, W. Jiang, and C. M. Wang, Nucl. Instrum. Methods Phys. Res. B 216, 25 (2004).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics