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The nanoindentation applied to predict the interface delamination for the C/amorphous Si composite film

J. Appl. Phys. 106, 083517 (2009); doi:10.1063/1.3246618

Published 26 October 2009

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Chang-Fu Han,1 Chao-Yu Huang,2 Bo-Hsiung Wu,2 and Jen-Fin Lin1,2
1Department of Mechanical Engineering, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
2Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, Taiwan 701, Republic of China
In the present study, the indentation depth corresponding to the pop-in arising in the loading process is found to be quite close to the C/amorphous Si composite film thickness, regardless of the C-film thickness. This load-depth behavior gives a clue that the occurrence of pop-in is perhaps related to the buckling of the composite film, which had already delaminated from the silicon substrate. This indentation depth of buckling predicted by the present model is quite close to the pop-in depth obtained from experimental results, regardless of the change in the C-film thickness. This characteristic reveals that the present model is developed successfully to predict the pop-in depth of a specimen, and the pop-in is indeed created due to the buckling of the composite film under a compression stress. ©2009 American Institute of Physics
History: Received 18 June 2009; accepted 18 September 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083517/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 73.40.Qv
    Electrical properties of metal-insulator-semiconductor structures
  • 61.43.Dq
    Structure of amorphous semiconductors, metals, and alloys
  • 68.55.aj
    Insulator thin film nucleation and growth
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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