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Formation of defects in boron nitride by low energy ion bombardment

J. Appl. Phys. 106, 083523 (2009); doi:10.1063/1.3253576

Published 29 October 2009

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R. Peter,1 A. Bozanic,1 M. Petravic,1 Y. Chen,2 L.-J. Fan,3 and Y.-W. Yang3
1Department of Physics, University of Rijeka, 51000 Rijeka, Croatia
2Institute for Technology Research and Innovation, Deakin University, Geelong, Victoria 3217, Australia
3National Synchrotron Radiation Research Center, Hsinchu 30077, Taiwan

Formation of defects in hexagonal and cubic boron nitride (h-BN and c-BN, respectively) under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure (NEXAFS) around boron and nitrogen K-edges. Breaking of B–N bonds for both argon and nitrogen bombardment and formation of nitrogen vacancies, VN, has been identified from the B K-edge of both h-BN and c-BN, followed by the formation of molecular nitrogen, N2, at interstitial positions. The presence of N2 produces an additional peak in photoemission spectra around N 1s core level and a sharp resonance in the low-resolution NEXAFS spectra around N K-edge, showing the characteristic vibrational fine structure in high-resolution measurements. In addition, several new peaks within the energy gap of BN, identified by NEXAFS around B and N K-edges, have been assigned to boron or nitrogen interstitials, in good agreement with theoretical predictions. Ion bombardment destroys the cubic phase of c-BN and produces a phase similar to a damaged hexagonal phase. ©2009 American Institute of Physics
History: Received 20 August 2009; accepted 21 September 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083523/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.72.jd
    Vacancies (point defects)
  • 61.72.jj
    Interstitials
  • 61.72.uj
    Doping and impurity implantation in III-V and II-VI semiconductors
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • 78.70.Dm
    X-ray absorption spectra (condensed matter)
  • YEAR: 2009

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ISSN:
0021-8979 (print)   1089-7550 (online)
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