Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Formation of defects in boron nitride by low energy ion bombardment
Formation of defects in hexagonal and cubic boron nitride (h-BN and c-BN, respectively) under low-energy argon or nitrogen ion-bombardment has been studied by near-edge x-ray absorption fine structure...
Next Article
Electronic structure and optical properties of Sb-doped SnO2
The electronic structures and optical properties of pure and Sb-doped SnO2 are investigated by first-principles calculations based on the density functional theory. The calculation results show that t...

Structural and magnetic properties of the molecular beam epitaxy grown MnSb layers on GaAs substrates

J. Appl. Phys. 106, 083524 (2009); doi:10.1063/1.3246806

Published 29 October 2009

You are not logged in to this journal. Log in

Krystyna Lawniczak-Jablonska,1 Anna Wolska,1 Jadwiga Bak-Misiuk,1 Elzbieta Dynowska,1 Przemyslaw Romanowski,1 Jaroslaw Z. Domagala,1 Roman Minikayev,1 Dariusz Wasik,2 Marcin T. Klepka,1 Janusz Sadowski,1,3 Adam Barcz,1 Piotr Dluzewski,1 Slawomir Kret,1 Andrzej Twardowski,2 Maria Kamińska,2 Andreas Persson,4 Dimitri Arvanitis,4 Elisabeth Holub-Krappe,5 and Adam Kwiatkowski2
1Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
2Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoza 69, 00-681 Warsaw, Poland
3MAX-Lab, Lund University, Lund SE-221 00, Sweden
4Department of Physics, Uppsala University, P.O. Box 530, 75121 Uppsala, Sweden
5Inst. Complex Magnetic Materials (M-I1), Helmholtz Centre Berlin for Materials and Energy (formerly Hahn-Meitner-Institute Berlin), Lise-Meitner-Campus, Hahn-Meitner-Platz 1, D-14109 Berlin, Germany
The structural and magnetic properties of MnSb layers grown on two differently oriented GaAs substrates are reported. The MnSb compounds grow nonhomogenously both on GaAs(111)B and on GaAs(100) substrates. In x-ray diffraction studies the formation of two epitaxial domains is observed depending on the crystallographic orientation of the substrate. The observed diffusion of Ga atoms from the substrate to the layers results in the formation of an additional Mn-rich cubic phase of GaMnSb. In the case of the (100) oriented substrate, the diffusion of Mn into the substrate was additionally found. Traces of other phases were also noticed. The complex morphology of the layers is found to influence their magnetic properties. Magnetic force microscopy images revealed an inhomogenous distribution of the magnetic force gradient on the surface and the formation of magnetic domains in the samples. X-ray absorption studies of the chemical bonding and local atomic structure around Mn atoms confirmed high structural and chemical disorder in the samples. The chemical bonding of the dominating fraction of Mn atoms is found, however, similar to that in the reference MnSb powder. The x-ray magnetic circular dichroism measurements reveal an enhanced orbital moment and a reduced spin moment, which is most likely caused by the presence of different phases and a Mn-rich surface in the investigated samples. ©2009 American Institute of Physics
History: Received 10 July 2009; accepted 14 September 2009; published 29 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083524/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (1396 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 61.50.Lt
    Crystal binding; cohesive energy
  • 78.20.Ls
    Magnetooptical effects (bulk materials/thin films)
  • 78.70.Dm
    X-ray absorption spectra (condensed matter)
  • YEAR: 2009

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (27)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. A. F. Panchula, C. Kaiser, A. Kellock, and S. S. Parkin, Appl. Phys. Lett. 83, 1812 (2003).
  2. H. Akinaga, K. Tanaka, K. Ando, and T. Katayama, J. Cryst. Growth 150, 1144 (1995).
  3. H. Akinaga, S. Mijanishi, W. Van Roy, J. De Boeck, and G. Borghs, Appl. Phys. Lett. 73, 3285 (1998).
  4. H. Tatsuoka, H. Kuwabara, M. Oshita, Y. Nakanishi, T. Nakamura, and H. Fujiysau, Appl. Surf. Sci. 92, 382 (1996).
  5. H. Tatsuoka, H. Kuwabara, M. Oshita, T. Nakamura, H. Fujiysau, and Y. Nakanishi, Thin Solid Films 281–282, 499 (1996).
  6. H. Tatsuoka, H. Kuwabara, M. Oshita, T. Nakamura, H. Fujiysau, and Y. Nakanishi, J. Cryst. Growth 166, 754 (1996).
  7. K. Ono, M. Shuzo, and M. Oshima, Phys. Rev. B 64, 085328 (2001).
  8. M. Oshima, M. Shuzo, K. Ono, H. Fujioka, Y. Watanabe, S. Miyanishi, and H. Akinaga, Appl. Surf. Sci. 130–132, 892 (1998).
  9. S. X. Liu, S. M. Bedair, and N. A. El-Masry, Mater. Lett. 42, 121 (2000).
  10. W. Braun, A. Trampert, V. Kaganer, B. Jenichen, D. K. Satapathy, and K. H. Ploog, J. Cryst. Growth 301–302, 50 (2007).
  11. H. Zhang, S. S. Kushvaha, S. Chen, X. Gao, D. Qi, T. S. Wee, and X. -S. Wang, Appl. Phys. Lett. 90, 202503 (2007).
  12. M. Mizuguchi, H. Akinaga, K. Ono, and M. Oshima, Appl. Phys. Lett. 76, 1743 (2000).
  13. H. Akinaga, M. Mizuguchi, K. Ono, and M. Oshima, Appl. Phys. Lett. 76, 357 (2000).
  14. J. E. Pask, L. H. Yang, C. Y. Fong, W. E. Pickett, and S. Dag, Phys. Rev. B 67, 224420 (2003).
  15. J. -C. Zheng and J. W. Davenport, Phys. Rev. B 69, 144415 (2004).
  16. A. Kimura, S. Suga, T. Shishidou, S. Imada, T. Muro, S. Y. Park, T. Miyahara, T. Kaneko, and T. Kanomata, Phys. Rev. B 56, 6021 (1997).
  17. K. Ganesan and H. L. Bhat, J. Supercond. Novel Magn. 21, 391 (2008).
  18. J. Rodriguez-Carvajal, CPD-IUCR Newsl. 26, 12 (2001).
  19. B. Ravel and M. Newville, J. Synchrotron Radiat. 12, 537 (2005).
  20. L. Wenzel, D. Arvanitis, H. Rabus, T. Lederer, K. Baberschke, and G. Comelli, Phys. Rev. Lett. 64, 1765 (1990).
  21. R. Coehoorn, C. Haas, and R. A. de Groot, Phys. Rev. B 31, 1980 (1985).
  22. Y. Yonamoto, T. Yokoyama, K. Amemiya, D. Matsumura, and T. Ohta, Phys. Rev. B 63, 214406 (2001).
  23. H. A. Durr, G. van der Laan, D. Spanke, F. U. Hillebrecht, and N. B. Brookes, Phys. Rev. B 56, 8156 (1997).
  24. P. Ravindran, A. Delin, P. James, B. Johansson, J. M. Wills, R. Ahuja, and O. Eriksson, Phys. Rev. B 59, 15680 (1999).
  25. G. Prathiba, B. Anto Naanci, and M. Rajagopalan, J. Mag. Mag. Mater. 309, 251 (2007).
  26. M. Tischer, O. Hjortsam, D. Arvanitis, J. Hunter Dunn, F. May, K. Baberscheke, J. Trygg, J. M. Wills, B. Johansson, and O. Eriksson, Phys. Rev. Lett. 75, 1602 (1995).
  27. W. S. Yun, J. Choi, G. -B. Cha, S. Cho, and S. C. Hong, J. Korean Phys. Soc. 49, 1020 (2006).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics