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Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

J. Appl. Phys. 106, 083704 (2009); doi:10.1063/1.3245327

Published 20 October 2009

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Y. Zhang,1 M. V. Fischetti,1 B. Sorée,2 W. Magnus,2,3 M. Heyns,2,4 and M. Meuris2
1Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA
2IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
3University of Antwerpen, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
4Department of Engineering, Katholieke Universiteit Leuven, Kasteelpark, Arenberg 10, B-3001 Leuven, Belgium
We present comprehensive calculations of the low-field hole mobility in Ge p-channel inversion layers with SiO2 insulator using a six-band k·p band-structure model. The cases of relaxed, biaxially, and uniaxially (both tensily and compressively) strained Ge are studied employing an efficient self-consistent method—making use of a nonuniform spatial mesh and of the Broyden second method—to solve the coupled envelope-wave function k·p and Poisson equations. The hole mobility is computed using the Kubo–Greenwood formalism accounting for nonpolar hole-phonon scattering and scattering with interfacial roughness. Different approximations to handle dielectric screening are also investigated. As our main result, we find a large enhancement (up to a factor of 10 with respect to Si) of the mobility in the case of uniaxial compressive stress similarly to the well-known case of Si. Comparison with experimental data shows overall qualitative agreement but with significant deviations due mainly to the unknown morphology of the rough Ge-insulator interface, to additional scattering with surface optical phonon from the high-kappa insulator, to Coulomb scattering interface traps or oxide charges—ignored in our calculations—and to different channel structures employed. ©2009 American Institute of Physics
History: Received 3 May 2009; accepted 14 September 2009; published 20 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083704/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • 73.20.-r
    Electron states at surfaces and interfaces
  • 68.35.Ja
    Solid surface and interface dynamics and vibrations
  • 72.10.Fk
    Carrier scattering by point defects, dislocations, surfaces, and other imperfections
  • 71.15.Mb
    Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure)
  • 72.20.Fr
    Low-field transport and mobility; piezoresistance (semiconductors/insulators)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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