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Improved charge transport through Si based multiple quantum wells with substoichiometric SiOx barrier layers

J. Appl. Phys. 106, 083706 (2009); doi:10.1063/1.3238294

Published 21 October 2009

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Birger Berghoff,1 Stephan Suckow,1 Robert Rölver,1 Bernd Spangenberg,1 Heinrich Kurz,1 Alla Sologubenko,2,3 and Joachim Mayer2,3
1Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
2Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen, Germany
3Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich, 52426 Jülich, Germany
The vertical charge transport through Si/SiOx multiple quantum wells (QWs) is investigated. Upon thermal annealing, segregation of excess Si from the SiOx layers leads to the formation of highly conductive pathways between Si grains from adjacent QWs separated by ultrathin silicon oxide barriers with barrier heights of 0.53–0.65 eV. Compared to stoichiometric Si/SiO2 layer stacks, conductivity is increased by up to ten orders of magnitude, which opens the way to an efficient charge carrier extraction in photovoltaic systems with distinct quantum confinement. ©2009 American Institute of Physics
History: Received 30 April 2009; accepted 3 September 2009; published 21 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/083706/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.65.Fg
    Quantum wells (structure and nonelectronic properties)
  • 81.07.St
    Quantum wells: fabrication and characterization
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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