Adhesion in organic electronic structures
This paper presents the results of atomic force microscopy (AFM) measurements of the adhesion between materials relevant to organic solar cells and organic light-emitting devices. The adhesion is quan...
This paper presents the results of atomic force microscopy (AFM) measurements of the adhesion between materials relevant to organic solar cells and organic light-emitting devices. The adhesion is quan...
Advantages of admittance spectroscopy over time-of-flight technique for studying dispersive charge transport in an organic semiconductor
We show that admittance spectroscopy (AS) is a better technique than time of flight (TOF) to study the charge transport properties in dispersive materials. The hole transport properties of N,N-dipheny...
We show that admittance spectroscopy (AS) is a better technique than time of flight (TOF) to study the charge transport properties in dispersive materials. The hole transport properties of N,N-dipheny...
Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator
J. Appl. Phys. 106, 083709 (2009); doi:10.1063/1.3248358
Published 26 October 2009
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We report results from the investigation of the intrinsic high-frequency (HF) behavior of three-terminal junctions based on InGaAs/InAlAs heterostructures, using a well-calibrated three-dimensional semiclassical ensemble Monte Carlo simulation model. The simulator incorporates a more realistic surface charge model, designed specifically for HF simulations. A full analysis of the dynamics of electron transport in the devices is performed and a prediction of its intrinsic HF performance is presented. Simulation results demonstrate how these devices may be suitable for applications in the terahertz frequency range. Most importantly, we illustrate the important role played by surface charge effects in this frequency regime. The necessity of considering these effects as a key design factor for the development of future nanojunction structures operating in the terahertz regime is therefore discussed.
©2009 American Institute of Physics
| History: | Received 6 May 2009; accepted 21 September 2009; published 26 October 2009 |
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http://link.aip.org/link/?JAPIAU/106/083709/1 |
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BibSonomy
KEYWORDS and PACS
aluminium compounds,
gallium arsenide,
HF calculations,
high-frequency effects,
III-V semiconductors,
indium compounds,
Monte Carlo methods,
nanostructured materials,
semiconductor heterojunctions
- 81.05.Ea
III-V semiconductors: fabrication, treatment, testing and analysis - 81.07.Bc
Nanocrystalline materials: fabrication and characterization - 61.46.Df
Structure of nanocrystals and nanoparticles - 73.40.Kp
Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions - 72.30.+q
High-frequency effects; plasma effects in electronic transport - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (14)
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