Analysis of the high-frequency performance of InGaAs/InAlAs nanojunctions using a three-dimensional Monte Carlo simulator
We report results from the investigation of the intrinsic high-frequency (HF) behavior of three-terminal junctions based on InGaAs/InAlAs heterostructures, using a well-calibrated three-dimensional se...
We report results from the investigation of the intrinsic high-frequency (HF) behavior of three-terminal junctions based on InGaAs/InAlAs heterostructures, using a well-calibrated three-dimensional se...
Influence of ultrathin AlN interlayer on the microstructure and the electrical transport properties of AlxGa1−xN/GaN heterostructures
The microstructure and electrical properties of Al0.25Ga0.75N/GaN heterostructures with various AlN thicknesses have been investigated. An optimum thickness of AlN interlayer can remarkably improve th...
The microstructure and electrical properties of Al0.25Ga0.75N/GaN heterostructures with various AlN thicknesses have been investigated. An optimum thickness of AlN interlayer can remarkably improve th...
Advantages of admittance spectroscopy over time-of-flight technique for studying dispersive charge transport in an organic semiconductor
J. Appl. Phys. 106, 083710 (2009); doi:10.1063/1.3251409
Published 28 October 2009
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We show that admittance spectroscopy (AS) is a better technique than time of flight (TOF) to study the charge transport properties in dispersive materials. The hole transport properties of N,N![[prime]](http://scitation.aip.org/stockgif3/prime-script.gif)
-diphenyl-N,N-bis(1-naphthyl)(1,1-biphenyl)-4,4-diamine (NPB) doped with different traps were evaluated by AS and TOF techniques. It was found that both techniques can show clear signals for measuring the mobility of NPB doped with shallow traps. When NPB was doped with deep traps, the AS signals were still clear for mobility extraction. In sharp contrast, the TOF transients become featureless and the carrier transit time cannot be determined. The validity of AS in mobility determination was demonstrated by comparing the extracted AS to TOF mobilities. Generally, the hole mobilities extracted by these two techniques were in excellent agreement. In addition, we will demonstrate that AS can be employed to measure carrier dispersion.
©2009 American Institute of Physics
-diphenyl-N,N-bis(1-naphthyl)(1,1-biphenyl)-4,4-diamine (NPB) doped with different traps were evaluated by AS and TOF techniques. It was found that both techniques can show clear signals for measuring the mobility of NPB doped with shallow traps. When NPB was doped with deep traps, the AS signals were still clear for mobility extraction. In sharp contrast, the TOF transients become featureless and the carrier transit time cannot be determined. The validity of AS in mobility determination was demonstrated by comparing the extracted AS to TOF mobilities. Generally, the hole mobilities extracted by these two techniques were in excellent agreement. In addition, we will demonstrate that AS can be employed to measure carrier dispersion.
©2009 American Institute of Physics
| History: | Received 30 June 2009; accepted 23 September 2009; published 28 October 2009 |
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BibSonomy
KEYWORDS and PACS
- 72.20.Ee
Mobility edges; hopping transport (semiconductors/insulators) - 81.05.Hd
Other semiconductors: fabrication, treatment, testing and analysis - 81.05.Lg
Organic materials and polymers: fabrication, treatment, testing and analysis - 72.20.Jv
Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators) - YEAR: 2009
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0021-8979 (print)
1089-7550 (online)
AIP
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