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Structure and dielectric properties of cubic Bi2(Zn1/3Ta2/3)2O7 thin films

J. Appl. Phys. 106, 084103 (2009); doi:10.1063/1.3246807

Published 26 October 2009

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Jun Hong Noh,1 Hee Beom Hong,1 Jung-Kun Lee,3 Chin Moo Cho,1 Jin Young Kim,4 Sangwook Lee,2 In-Sun Cho,2 Hyun Suk Jung,5 and Kug Sun Hong1,2
1Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea
2Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Republic of Korea
3Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
4Chemical and Biosciences Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA
5School of Advanced Materials Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul 136-702, South Korea

Pyrochlore Bi2(Zn1/3Ta2/3)2O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [epsilon~177, temperature coefficient of capacitance (TCC) ~−170  ppm/°C] are much different from those of monoclinic BZT ceramics (epsilon~61, TCC ~+60  ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition. ©2009 American Institute of Physics
History: Received 9 July 2009; accepted 12 September 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/084103/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.55.+f
    Dielectric thin films
  • 77.84.Dy
    Dielectric, piezoelectric, and ferroelectric niobates, titanates, tantalates, PZT ceramics, etc
  • 68.55.at
    Thin film nucleation and growth in other materials
  • 81.16.Mk
    Laser-assisted deposition in nanofabrication and processing
  • 81.15.Fg
    Laser deposition
  • YEAR: 2009

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ISSN:
0021-8979 (print)   1089-7550 (online)
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