Structure and dielectric properties of cubic Bi2(Zn1/3Ta2/3)2O7 thin films
J. Appl. Phys. 106, 084103 (2009); doi:10.1063/1.3246807
Published 26 October 2009
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Pyrochlore Bi2(Zn1/3Ta2/3)2O7 (BZT) films were prepared by pulsed laser deposition on Pt/TiO2/SiO2/Si substrates. In contrast to bulk monoclinic BZT ceramics, the BZT films have a cubic structure mediated by an interfacial layer. The dielectric properties of the cubic BZT films [
~177, temperature coefficient of capacitance (TCC) ~−170 ppm/°C] are much different from those of monoclinic BZT ceramics (
~61, TCC ~+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.
©2009 American Institute of Physics
~177, temperature coefficient of capacitance (TCC) ~−170 ppm/°C] are much different from those of monoclinic BZT ceramics (
~61, TCC ~+60 ppm/°C). Increasing the thickness of the BZT films returns the crystal structure to the monoclinic phase, which allows the dielectric properties of the BZT films to be tuned without changing their chemical composition.
©2009 American Institute of Physics
| History: | Received 9 July 2009; accepted 12 September 2009; published 26 October 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/084103/1 |
KEYWORDS and PACS
bismuth compounds,
ceramics,
crystal structure,
dielectric thin films,
pulsed laser deposition,
zinc compounds
- 77.55.+f
Dielectric thin films - 77.84.Dy
Dielectric, piezoelectric, and ferroelectric niobates, titanates, tantalates, PZT ceramics, etc - 68.55.at
Thin film nucleation and growth in other materials - 81.16.Mk
Laser-assisted deposition in nanofabrication and processing - 81.15.Fg
Laser deposition - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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