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Mechanical stress induced voltage shift in polycrystalline Bi3.25La0.75Ti3O12 thin films

J. Appl. Phys. 106, 084105 (2009); doi:10.1063/1.3247344

Published 27 October 2009

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Xiumei Wu,1 Ya Zhai,1 Yi Kan,2 Xiaomei Lu,2 and Jinsong Zhu2
1Department of Physics, Southeast University, Nanjing 211189, People's Republic of China
2Department of Physics, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
Imprint behavior of polycrystalline Bi3.25La0.75Ti3O12 thin films under stress was studied. The voltage shift along the positive voltage axis can be depressed by tensile stress while increased by compressive stress. With the measured voltage increasing, the voltage shift referred above increases and the increase trend gets enhanced under both compressive and tensile stress compared with that at zero stress. The asymmetric distribution of the trapped charged in films, which is caused by the increase of the in-plane polarization component for the domain reorientation induced by stress or for the voltage-assisted domain walls depinning, was considered the contribution to the voltage shift. ©2009 American Institute of Physics
History: Received 12 August 2009; accepted 6 September 2009; published 27 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/084105/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 77.84.Dy
    Dielectric, piezoelectric, and ferroelectric niobates, titanates, tantalates, PZT ceramics, etc
  • 77.80.Dj
    Ferroelectric domain structure; hysteresis
  • 81.40.Lm
    Deformation, plasticity, and creep
  • 62.20.F-
    Deformation and plasticity of solids
  • 77.22.Ej
    Dielectric polarization and depolarization
  • 77.55.+f
    Dielectric thin films
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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REFERENCES (21)
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