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Room-temperature grain growth in sputtered nanoscale Pd thin films: Dynamic scaling behaviour on SiO2

J. Appl. Phys. 106, 084309 (2009); doi:10.1063/1.3246619

Published 21 October 2009

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F. Ruffino, A. Irrera, R. De Bastiani, and M. G. Grimaldi
Dipartimento di Fisica e Astronomia and MATIS, Università di Catania, via S. Sofia 64, I-95123 Catania, Italy
Dynamic scaling behavior has been observed during the room-temperature growth of sputtered Pd films on SiO2 using the scanning electron microscopy technique. By the analyses of the dependence of the Pd grain size and surface density on the film thickness, the dynamical growth exponent z=4.2±0.3 was obtained, suggesting a conservative growth process. The analysis of the fraction of surface covered by Pd as a function of film thickness (up to a maximum of 8.5×1016  atoms/cm2, corresponding to 125  nm) allowed us to identify two different growth regimes in the investigated range: films thinner than 1.8×1016  atoms/cm2 (26.5  nm) that grow as an outside-cluster system and thicker film that exhibit an islandlike growth. ©2009 American Institute of Physics
History: Received 22 June 2009; accepted 16 September 2009; published 21 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/084309/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.A-
    Thin film nucleation and growth
  • 68.55.jd
    Thin film thickness
  • YEAR: 2009

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ISSN:
0021-8979 (print)   1089-7550 (online)
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