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Structural and particulate to bulk phase transformation of CdS film on annealing: A Raman spectroscopy study

J. Appl. Phys. 106, 084315 (2009); doi:10.1063/1.3236516

Published 26 October 2009

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Alka A. Ingale,1 Shramana Mishra,1 U. N. Roy,1 Pragya Tiwari,2 and L. M. Kukreja3
1Laser Physics Application Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
2Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
3Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452013, India
We have studied the effect of annealing (at temperatures 300, 400, and 500 °C) on nanoparticulate CdS film on silicon substrate deposited by hybrid Langmuir–Blodgett chemical bath deposition technique. Width, intensity, and the line shape of the longitudinal optical phonon in Raman spectra and photoluminescence (PL) spectra suggest that the annealing brings about coalescence of nanoparticles at 300 °C, increasing the size of the nanoparticles and also increases the red region PL related to surface states. Annealing at 400 °C leads to two different coexistent states, showing larger nanoparticles and bulklike film. On further annealing at 500 °C, PL shows a drastic redshift to PL of bulklike CdS. This is well brought out by resonance Raman measurements and later confirmed by scanning electron microscope data. Most interesting observation is that PL and Raman results together are indicative of phase transformation of nanoparticulate hexagonal CdS film to bulklike cubic CdS film on annealing at 500 °C, unlike cubic to hexagonal structural phase transition observed in bulk CdS films. ©2009 American Institute of Physics
History: Received 23 April 2009; accepted 31 August 2009; published 26 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/084315/1
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KEYWORDS and PACS

Keywords
PACS
  • 64.70.kg
    Solid-solid transitions in semiconductors
  • 78.66.Hf
    Optical properties of II-VI semiconductors (thin films)
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 78.55.Et
    Photoluminescence in II-VI semiconductors
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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