Size and spatial homogeneity of SiGe quantum dots in amorphous silica matrix
J. Appl. Phys. 106, 084319 (2009); doi:10.1063/1.3248373
Published 26 October 2009
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In this paper, we present a study of structural properties of SiGe quantum dots formed in amorphous silica matrix by magnetron sputtering technique. We investigate deposition conditions leading to the formation of dense and uniformly sized quantum dots, distributed homogeneously in the matrix. X-ray and Raman spectroscopy were used to estimate the Si content. A detailed analysis based on grazing incidence small angle x-ray scattering revealed the influence of the deposition conditions on quantum dot sizes, size distributions, spatial arrangement, and concentration of quantum dots in the matrix, as well as the Si:Ge content.
©2009 American Institute of Physics
| History: | Received 22 June 2009; accepted 21 September 2009; published 26 October 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/084319/1 |
KEYWORDS and PACS
amorphous state,
Ge-Si alloys,
Raman spectra,
semiconductor materials,
semiconductor quantum dots,
silicon compounds,
sputter deposition,
X-ray scattering,
X-ray spectra
- 68.65.Hb
Quantum dots patterned in quantum wells (structure and nonelectronic properties) - 78.67.Hc
Optical properties of quantum dots - 81.07.Ta
Quantum dots: fabrication and characterization - 81.15.Cd
Deposition by sputtering - 78.30.Hv
Infrared and Raman spectra in nonmetallic inorganics - 78.70.Ck
X-ray scattering (condensed matter) - YEAR: 2009
RELATED DATABASES
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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