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Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

J. Appl. Phys. 106, 084511 (2009); doi:10.1063/1.3234400

Published 28 October 2009

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Tze-Ching Fung,1 Chiao-Shun Chuang,1 Charlene Chen,1 Katsumi Abe,2 Robert Cottle,3 Mark Townsend,3 Hideya Kumomi,2 and Jerzy Kanicki1
1Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2Canon Research Center, Canon Inc., 3-30-2 Shimomaruko, Ohta-ku, Tokyo 146-8501, Japan
3Silvaco International, Santa Clara, California 95054, USA
We reported on a two-dimensional simulation of electrical properties of the radio frequency (rf) sputter amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs). The a-IGZO TFT used in this work has the following performance: field-effect mobility (µeff) of ~12  cm2/V s, threshold voltage (Vth) of ~1.15  V, subthreshold swing (S) of ~0.13  V/dec, and on/off ratio over 1010. To accurately simulate the measured transistor electrical properties, the density-of-states model is developed. The donorlike states are also proposed to be associated with the oxygen vacancy in a-IGZO. The experimental and calculated results show that the rf sputter a-IGZO TFT has a very sharp conduction band-tail slope distribution (Ea=13  meV) and Ti ohmic-like source/drain contacts with a specific contact resistance lower than 2.7×10−3  Omega cm2. ©2009 American Institute of Physics
History: Received 25 June 2009; accepted 24 August 2009; published 28 October 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/084511/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
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