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Spectroscopic determination of the doping and mobility of terahertz quantum cascade structures

J. Appl. Phys. 106, 093104 (2009); doi:10.1063/1.3247973

Published 5 November 2009

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J. Lloyd-Hughes, Y. L. Delley, G. Scalari, M. Fischer, V. Liverini, M. Beck, and J. Faist
Institute for Quantum Electronics, ETH Zurich, 8092 Zurich, Switzerland
Terahertz time-domain spectroscopy is shown to provide a convenient and rapid means to measure the conductivity of individual layers in semiconductor heterostructures such as terahertz quantum cascade lasers. By modeling the complex transmission at terahertz frequencies, the electron density and the in-plane momentum scattering time of the active regions and doped contact layers were determined for both GaAs/AlGaAs and InGaAs/InAlAs epilayers. The measured temperature dependence of the electron scattering rate revealed the significance of impurity and LO phonon scattering. The implications for laser operation at room temperature are discussed by considering the changes in absorption and resonant tunneling current with temperature. ©2009 American Institute of Physics
History: Received 15 September 2009; accepted 17 September 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/093104/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.By
    Design of specific laser systems
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (19)
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