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Optically active Er3+ ions in SiO2 codoped with Si nanoclusters

J. Appl. Phys. 106, 093107 (2009); doi:10.1063/1.3253753

Published 6 November 2009

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D. Navarro-Urrios,1 Y. Lebour,1 O. Jambois,1 B. Garrido,1 A. Pitanti,2 N. Daldosso,2 L. Pavesi,2 J. Cardin,3 K. Hijazi,3 L. Khomenkova,3 F. Gourbilleau,3 and R. Rizk3
1MIND-IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona, CAT, Spain
2Dipartimento di Fisica, Laboratorio di Nanoscienze, Università di Trento, Via Sommarive 14, I-38100 Povo (Trento), Italy
3CIMAP, UMR CEA/CNRS 6252, 6 Boulevard Maréchal Juin, 14050 CAEN Cedex 4, France
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon oxide materials codoped with Er3+. The spectral dependence of the direct excitation cross section (sigmadir) of the Er3+ atomic 4I15/2-->4I11/2 transition (around 0.98  µm) has been measured by time resolved µ-photoluminescence measurements. We have determined that sigmadir is 9.0±1.5×10−21  cm2 at 983 nm, at least twice larger than the value determined on a stoichiometric SiO2 matrix. This result, in combination with a measurement of the population of excited Er3+ as a function of the pumping flux, has allowed quantifying accurately the amount of optically active Er3+. This concentration is, in the best of the cases, 26% of the total Er population measured by secondary ion mass spectrometry, which means that only this percentage could provide optical gain in an eventual optical amplifier based on this material. ©2009 American Institute of Physics
History: Received 27 May 2009; accepted 29 September 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/093107/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.55.Hx
    Photoluminescence in solid inorganic materials
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 61.50.Nw
    Crystal stoichiometry
  • 79.20.Rf
    Atomic, molecular and ion beam impact and interactions with surfaces
  • 81.07.Bc
    Nanocrystalline materials: fabrication and characterization
  • 78.47.Cd
    Time-resolved luminescence in condensed matter
  • 61.72.up
    Doping and impurity implantation in other materials
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (25)
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