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Effect of ultraviolet irradiation on luminescence properties of undoped ZnS and ZnS:Ag nanoparticles

J. Appl. Phys. 106, 093506 (2009); doi:10.1063/1.3253756

Published 6 November 2009

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Hua Qu, Lixin Cao, Ge Su, Wei Liu, Yuanguang Sun, and Bohua Dong
Institute of Material Science and Engineering, Ocean University of China, Qingdao 266100, People's Republic of China
Undoped ZnS and ZnS:Ag nanoparticles have been prepared through hydrothemal synthesis. The changes of luminescence properties induced by ultraviolet irradiation have been investigated. For both samples, the initial slight increase in luminescence is ascribed to the fast electron filling, while the succedent decrease is supposed to be caused by nonradiative pathways originating from some unknown photochemical products. The more remarkable decrease in ZnS:Ag is put down to the segregation of Ag on the surfaces of ZnS:Ag nanoparticles. Multipeaks Gaussian fitting is applied to the emission spectra. The fitting peaks around 490 nm in both samples are related with the surface states emission and the fitting peaks around 456 nm in ZnS nanoparticles and 443 nm in ZnS:Ag nanoparticles are attributed to the type of donor-acceptor pair luminescence, which corresponds to the transition between different donor levels and acceptor levels in different samples. A model of stretched exponential function is used to fit the fluorescence decay spectra. Result shows that the introduction of Ag+ ions causes a spectacular lifetime shortening of ZnS. Experiment result also verifies the model as that the lifetimes of both samples are notably shortened after irradiation for 2 h. ©2009 American Institute of Physics
History: Received 8 June 2009; accepted 28 September 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/093506/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.67.Bf
    Optical properties of nanocrystals and nanoparticles
  • 61.46.Df
    Structure of nanocrystals and nanoparticles
  • 61.82.Rx
    Radiation effects on nanocrystalline materials
  • 61.80.Ba
    Ultraviolet, visible, and infrared radiation effects
  • 78.55.Et
    Photoluminescence in II-VI semiconductors
  • 81.16.-c
    Methods of nanofabrication and processing
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

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