Mechanism of Na-doped p-type ZnO films: Suppressing Na interstitials by codoping with H and Na of appropriate concentrations
J. Appl. Phys. 106, 093508 (2009); doi:10.1063/1.3254221
Published 6 November 2009
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Hydrogen is codoped with sodium into ZnO films. X-ray photoelectron spectroscopy and secondary ion mass spectroscopy indicate that the Na concentration decreases as the substrate temperature increases. Hall-effect tests reveal a transition from n-type to p-type conduction when the growth temperature increases, which is explained by the suppression of Na interstitials by codoping with H and Na of appropriate concentrations. An insulating intended Na–H codoped sample shows reduced resistivity and p-type conductivity after annealing at 550 °C, which may be due to dissociation of NaZn–H complexes. The realization of p-type ZnO by Na–H codoping may explain the discrepancies in behavior of Na in ZnO and suggests the potential of Na–H codoping method [E.-C. Lee and K. J. Chang, Phys. Rev. B 70, 115210 (2004)].
©2009 American Institute of Physics
| History: | Received 16 July 2009; accepted 29 September 2009; published 6 November 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/093508/1 |
KEYWORDS and PACS
annealing,
doping profiles,
electrical conductivity transitions,
Hall effect,
hydrogen,
II-VI semiconductors,
interstitials,
secondary ion mass spectra,
semiconductor doping,
semiconductor thin films,
sodium,
wide band gap semiconductors,
X-ray photoelectron spectra,
zinc compounds
- 61.72.uj
Doping and impurity implantation in III-V and II-VI semiconductors - 61.72.sd
Impurity concentration in crystals - 79.60.Dp
Photoelectron spectra of adsorbed layers and thin films - 61.72.jj
Interstitials - 81.40.Ef
Cold working, work hardening and annealing - 73.61.Ga
Electrical properties of II-VI semiconductors (thin films) - 73.50.Jt
Galvanomagnetic and other magnetotransport effects in thin films - YEAR: 2009
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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