Nanoindentation-induced phase transformation in relaxed and unrelaxed ion-implanted amorphous germanium
J. Appl. Phys. 106, 093509 (2009); doi:10.1063/1.3255999
Published 6 November 2009
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We have investigated nanoindentation-induced plastic deformation in amorphous germanium (a-Ge) prepared by high-energy self-ion implantation. Using cross-sectional transmission electron microscopy, micro-Raman spectroscopy, and force-displacement curve analysis, we find strong evidence for a pressure-induced metallic phase transformation during indentation. Crystalline diamond-cubic Ge-I is observed in residual indents. Relaxed and unrelaxed structural states of a-Ge exhibit similar behavior on loading, but transform at different pressures on unloading. Both forms are markedly softer mechanically than crystalline Ge. These results assist in furthering the understanding of the intriguing phenomenon known as “explosive crystallization.”
©2009 American Institute of Physics
| History: | Received 26 August 2009; accepted 29 September 2009; published 6 November 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/093509/1 |
KEYWORDS and PACS
amorphisation,
amorphous semiconductors,
crystallisation,
elemental semiconductors,
germanium,
ion implantation,
nanoindentation,
plastic deformation,
Raman spectra,
semiconductor doping,
transmission electron microscopy
- 62.20.fq
Plasticity and superplasticity of solids - 81.40.Lm
Deformation, plasticity, and creep - 78.30.Am
Infrared and Raman spectra in elemental semiconductors and insulators - 61.72.uf
Doping and impurity implantation in germanium and silicon - 64.70.dg
Crystallization of specific substances (solid-liquid transitions) - YEAR: 2009
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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