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Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy

J. Appl. Phys. 106, 093704 (2009); doi:10.1063/1.3254241

Published 6 November 2009

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M. E. White,1 O. Bierwagen,1 M. Y. Tsai,2 and J. S. Speck1
1Department of Materials, University of California, Santa Barbara, California 93106-5050, USA
2Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106-9560, USA
By antimony doping tin oxide, SnO2:Sb (ATO), below 1.0% Sb concentration, controllable n-type doping was realized. Plasma-assisted molecular beam epitaxy has been used to grow high quality single crystalline epitaxial thin films of unintentionally doped (UID) and Sb-doped SnO2 on r-plane sapphire substrates. A UID thickness series showed an electron concentration of 7.9×1018  cm−3 for a 26  nm film, which decreased to 2.7×1017  cm−3 for a 1570  nm film, whereas the mobility increased from 15  to  103  cm2/V  s, respectively. This series illustrated the importance of a buffer layer to separate unintentional heterointerface effects from the effect of low Sb doping. Unambiguous bulk electron doping was established by keeping the Sb concentration constant but changing the Sb-doped layer thickness. A separate doping series correlated Sb concentration and bulk electron doping. Films containing between 9.8×1017 and 2.8×1020 Sb atoms/cm3 generated an electron concentration of 1.1×1018–2.6×1020  cm−3. As the atomic Sb concentration increased, the mobility and resistivity decreased from 110  to  36  cm2/V  s and 5.1×10−2  to  6.7×10−4  Omega  cm, respectively. The Sb concentration was determined by secondary ion mass spectrometry. X-ray diffraction and atomic force microscopy measurements showed no detrimental effects arising from the highest levels of Sb incorporation. Temperature dependent Hall measurements established a lower limit for the Sb electron activation energy of 13.2  meV and found that films with greater than 4.9×1019  electrons/cm3 were degenerately doped. Within experimental uncertainties, 100% donor efficiency was determined for Sb-doped SnO2 in the range studied. ©2009 American Institute of Physics
History: Received 22 July 2009; accepted 28 September 2009; published 6 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/093704/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Le
    Electrical properties of other inorganic semiconductors (thin films)
  • 73.50.Jt
    Galvanomagnetic and other magnetotransport effects in thin films
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 79.20.Rf
    Atomic, molecular and ion beam impact and interactions with surfaces
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 52.77.-j
    Plasma applications
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 61.72.up
    Doping and impurity implantation in other materials
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

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