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Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

J. Appl. Phys. 106, 094101 (2009); doi:10.1063/1.3246835

Published 2 November 2009

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N. Menou,1 M. Popovici,1 S. Clima,1 K. Opsomer,1,2 W. Polspoel,1 B. Kaczer,1 G. Rampelberg,2 K. Tomida,1 M. A. Pawlak,1 C. Detavernier,2 D. Pierreux,3 J. Swerts,1,3 J. W. Maes,3 D. Manger,4 M. Badylevich,5 V. Afanasiev,5 T. Conard,1 P. Favia,1 H. Bender,1 B. Brijs,1 W. Vandervorst,1 S. Van Elshocht,1 G. Pourtois,1 D. J. Wouters,1 S. Biesemans,1 and J. A. Kittl1
1IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
2Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
3ASM Belgium, Kapeldreef 75, B-3001 Leuven, Belgium
4Qimonda, Belgium, Kapeldreef 75, B-3001 Leuven, Belgium
5Department of Physics and Astronomy and Institute for Nanoscale Physics and Chemistry (INPAC), University of Leuven, B-3001 Leuven, Belgium
In this work, the physical and electrical properties of SrxTi1−xOy (STO)-based metal-insulator-metal capacitors (MIMcaps) with various compositions are studied in detail. While most recent studies on STO were done on noblelike metal electrodes (Ru, Pt), this work focuses on a low temperature (250 °C) atomic layer deposition (ALD) process, using an alternative precursor set and carefully optimized processing conditions, enabling the use of low-cost, manufacturable-friendly TiN electrodes. Physical analyses show that the film crystallization temperature, its texture and morphology strongly depends on the Sr/Ti ratio. Such physical variations have a direct impact on the electric properties of SrxTi1−xOy based capacitors. It is found that Sr-enrichment result in a monotonous decrease in the dielectric constant and leakage current as predicted by ab initio calculations. The intercept of the EOT vs physical thickness plot further indicates that increasing the Sr-content at the film interface with the bottom TiN would result in lower interfacial equivalent-oxide thickness. ©2009 American Institute of Physics
History: Received 17 July 2009; accepted 16 September 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/094101/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 73.40.Rw
    Electrical properties of metal-insulator-metal structures
  • 77.22.Ch
    Permittivity (dielectric function)
  • 81.15.Ef
    Vacuum deposition
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (20)
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