Electrocaloric effect in BaTiO3 thin films
J. Appl. Phys. 106, 094104 (2009); doi:10.1063/1.3253736
Published 3 November 2009
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The modified transverse Ising model taking into account the four-spin exchange interaction and quantum fluctuation, as well as the mechanical constraint of the substrate, is constructed and applied to investigate the electrocaloric effect (ECE) in BaTiO3 thin films. It is found that the temperature dependence of ECE strongly depends on both the four-spin exchange interaction and quantum fluctuation. Most importantly, we achieve the adiabatic temperature change
T=11.78 K at Tm=490 K, which can be comparable with that observed experimentally in PbZr0.95Ti0.05O3 thin films and ferroelectric polymers. Furthermore, the internal stresses resulting from the clamping effect of the substrate play a crucial role in the ECE of ferroelectric films. Control of the misfit stress by appropriate choice of substrate provides an effective means to improve the adiabatic temperature change for use in cooling or thermodielectric power conversion devices.
©2009 American Institute of Physics
T=11.78 K at Tm=490 K, which can be comparable with that observed experimentally in PbZr0.95Ti0.05O3 thin films and ferroelectric polymers. Furthermore, the internal stresses resulting from the clamping effect of the substrate play a crucial role in the ECE of ferroelectric films. Control of the misfit stress by appropriate choice of substrate provides an effective means to improve the adiabatic temperature change for use in cooling or thermodielectric power conversion devices.
©2009 American Institute of Physics
| History: | Received 8 August 2009; accepted 26 September 2009; published 3 November 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/094104/1 |
KEYWORDS and PACS
barium compounds,
clamps,
exchange interactions (electron),
ferroelectric devices,
ferroelectric materials,
ferroelectric thin films,
internal stresses,
Ising model,
pyroelectricity
- 77.70.+a
Pyroelectric and electrocaloric effects - 71.70.Gm
Exchange interactions (condensed matter) - 77.55.+f
Dielectric thin films - 77.84.-s
Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials - 77.80.-e
Ferroelectricity and antiferroelectricity - 68.60.Bs
Mechanical and acoustical properties of thin films - YEAR: 2009
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
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