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Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot

J. Appl. Phys. 106, 094301 (2009); doi:10.1063/1.3245335

Published 4 November 2009

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Congxin Xia, Zaiping Zeng, and Shuyi Wei
Department of Physics, Henan Normal University, Xinxiang 453007, People's Republic of China
Within the framework of the effective-mass approximation, the barrier width dependence of the donor binding energy of hydrogenic impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot (QD) is calculated by means of a variational procedure, considering the strong built-in electric field effect due to the spontaneous and piezoelectric polarizations. Numerical results show that the built-in electric field and the donor binding energy of the impurity located at any growth direction position are obviously dependent on the barrier width in WZ In0.1Ga0.9N/GaN strained QD with a small barrier width (<8  nm). However, the built-in electric field and the donor binding energy of the impurity located at any growth direction position are insensitive to the barrier width in WZ In0.1Ga0.9N/GaN strained QD with a large barrier width (>8  nm). Moreover, the donor binding energy of the impurity located at the right boundary of the QD is independent of the barrier width with any dot height and indium composition when the barrier width is large (>8  nm). ©2009 American Institute of Physics
History: Received 5 July 2009; accepted 14 September 2009; published 4 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/094301/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.65.-k
    Low-dimensional, mesoscopic, and nanoscale systems: structure and nonelectronic properties
  • 71.15.Nc
    Total energy and cohesive energy calculations (condensed matter)
  • 71.18.+y
    Fermi surface: calculations and measurements; effective mass, -g factor
  • 77.22.Ej
    Dielectric polarization and depolarization
  • 77.65.-j
    Piezoelectricity and electromechanical effects
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

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