Barrier width dependence of the donor binding energy of hydrogenic impurity in wurtzite InGaN/GaN quantum dot
Within the framework of the effective-mass approximation, the barrier width dependence of the donor binding energy of hydrogenic impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot ...
Within the framework of the effective-mass approximation, the barrier width dependence of the donor binding energy of hydrogenic impurity in a cylindrical wurtzite (WZ) InGaN/GaN strained quantum dot ...
Chemical engineering of prehydrogenated C and BN-sheets by Li: Application in hydrogen storage
Our first-principles calculations show that if the hydrogen atoms on one of the faces of a graphane sheet (prehydrogenated graphene) are substituted with Li atoms, the resulting monolayer attains a go...
Our first-principles calculations show that if the hydrogen atoms on one of the faces of a graphane sheet (prehydrogenated graphene) are substituted with Li atoms, the resulting monolayer attains a go...
Initial growth process of carbon nanowalls synthesized by radical injection plasma-enhanced chemical vapor deposition
J. Appl. Phys. 106, 094302 (2009); doi:10.1063/1.3253734
Published 5 November 2009
You are not logged in to this journal. Log in
We synthesized carbon nanowalls (CNWs) using radical injection plasma-enhanced chemical vapor deposition. The initial growth process of CNWs was investigated with and without O2 gas addition to a C2F6 capacitively coupled plasma with H radical injection. In the case of the CNW synthesis without the addition of O2 gas, scanning electron microscopy (SEM), transmission electron microscopy, x-ray photoelectron spectroscopy (XPS), and Raman spectroscopy revealed that a 10-nm-thick interface layer composed of nanoislands was formed on a Si substrate approximately 1 min prior to CNW formation. In contrast, with O2 gas addition, SEM and XPS revealed that an interface layer was not formed and that CNWs were grown directly from nanoislands. Moreover, Raman spectroscopy suggested that the interface layer was composed of amorphous carbon and that O2 gas addition during CNW growth is effective for achieving a high graphitization of CNWs. Therefore, O2 gas addition has the effect of reducing the amorphicity and disorder of CNWs and controlling CNW nucleation.
©2009 American Institute of Physics
| History: | Received 27 July 2009; accepted 26 September 2009; published 5 November 2009 |
| Permalink: |
http://link.aip.org/link/?JAPIAU/106/094302/1 |
| BUY THIS ARTICLE | (US$24) |
|
|
|
|
Connotea
CiteULike
del.icio.us
BibSonomy
KEYWORDS and PACS
amorphous state,
carbon compounds,
graphitisation,
nanostructured materials,
nanotechnology,
nucleation,
plasma CVD,
Raman spectra,
scanning electron microscopy,
transmission electron microscopy,
X-ray photoelectron spectra
- 81.16.-c
Methods of nanofabrication and processing - 61.46.-w
Structure of nanoscale materials - 81.15.Gh
Chemical vapor deposition - 78.30.Hv
Infrared and Raman spectra in nonmetallic inorganics - 79.60.Jv
Photoelectron spectra of interfaces; heterostructures; nanostructures - 78.67.-n
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures - YEAR: 2009
PUBLICATION DATA
0021-8979 (print)
1089-7550 (online)
AIP
REFERENCES (14)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- A. K. Geim and K. S. Novoselov,
Nature Mater. 6, 183 (2007) . - K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov,
Science 306, 666 (2004) . - S. Y. Zhou, G. -H. Gweon, A. V. Fedorov, P. N. First, W. A. de Heer, D. -H. Lee, F. Guinea, A. H. Castro Neto, and A. Lanzara,
Nature Mater. 6, 770 (2007) . - Y. H. Wu, P. W. Qiao, T. C. Chong, and Z. X. Shen,
Adv. Mater. 14, 64 (2002) . - J. J. Wang, M. Y. Zhu, R. A. Outlaw, X. Zhao, D. M. Manos, B. C. Holloway, and V. P. Mammana, Appl. Phys. Lett. 85, 1265 (2004).
- N. G. Shang, F. C. K. Au, X. M. Meng, C. S. Lee, I. Bello, and S. T. Lee,
Chem. Phys. Lett. 358, 187 (2002) . - M. Hiramatsu and M. Hori,
Jpn. J. Appl. Phys., Part 1 45, 5522 (2006) . - M. Hiramatsu, K. Shiji, H. Amano, and M. Hori, Appl. Phys. Lett. 84, 4708 (2004).
- S. Kondo, M. Hori, K. Yamakawa, S. Den, H. Kano, and M. Hiramatsu,
J. Vac. Sci. Technol. B 26, 1294 (2008) . - H. Chatei, M. Belmahi, M. B. Assouar, L. Le Brizoual, P. Bourson, and J. Bougdira,
Diamond Relat. Mater. 15, 1041 (2006) . - M. Hiramatsu, M. Inayoshi, K. Yamada, E. Mizuno, M. Nawata, M. Ikeda, M. Hori, and T. Goto, Rev. Sci. Instrum. 67, 2360 (1996).
- K. Kobayashi, M. Tanimura, H. Nakai, A. Yoshimura, H. Yoshimura, K. Kojima, and M. Tachibana, J. Appl. Phys. 101, 094306 (2007).
- M. Zhu, J. Wang, R. A. Outlaw, K. Hou, D. M. Manos, and B. C. Holloway,
Diamond Relat. Mater. 16, 196 (2007) . - M. Y. Zhu, J. J. Wang, B. C. Holloway, R. A. Outlaw, X. Zhao, K. Hou, V. Shutthanandan, and D. M. Manos,
Carbon 45, 2229 (2007) .
