Journal of Applied Physics
Feedback | Help | Exit
Journal of Applied Physics
Search:
   
 
 
 
Previous Article
Quantum-coupled single-electron thermal to electric conversion scheme
Thermal to electric energy conversion with thermophotovoltaics relies on radiation emitted by a hot body, which limits the power per unit area to that of a blackbody. Microgap thermophotovoltaics take...
Next Article
Spectrally narrowed edge emission from leaky waveguide modes in organic light-emitting diodes
A dramatic spectral line narrowing of the edge emission at room temperature from tris(quinolinolate) Al (Alq3), N,N-diphenyl-N,N-bis(1-naphthylphenyl)-1,1-biphenyl-4,4-diamine (NPD), 4,4-bis(2,2-diphe...

Temperature dependence of buried channel ion sensitive field effect transistors

J. Appl. Phys. 106, 094501 (2009); doi:10.1063/1.3247577

Published 2 November 2009

You are not logged in to this journal. Log in

Roman Novitski,1 Hila Einati,1 and Yosi Shacham-Diamand1,2
1Department of Physical Electronics, Engineering Faculty and the University Research Institute for Nano Science and Nano-Technologies, Tel-Aviv University, Ramat-Aviv 69978, Israel
2The Department of Applied Chemistry, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan
In this paper we describe the temperature dependence of buried channel (BC) ion sensitive field effect transistor (ISFET). The device response depends on the temperature; hence, temperature variations can cause erroneous readings. A theoretical model describing the temperature dependence of BC-ISFET and a theoretical solution to eliminate the signal variations due to temperature changes are presented here. The suggested solution is based on an inverter containing n-BC-ISFET and p-BC-ISFET. The influence of various parameters on the operation of the inverter and its sensitivity are investigated. We discuss the influence of self-assembled monolayers on the operation of the inverter. ©2009 American Institute of Physics
History: Received 23 June 2009; accepted 6 September 2009; published 2 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/094501/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (1186 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (19)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Bergveld, Analytical and Biomedical Applications of ISFET (Elsevier, Amsterdam, 1988).
  2. M. J. Schöning and A. Poghossian, Analyst (Cambridge, U.K.) 127, 1137 (2002).
  3. C. F. Chan and M. H. White, Tech. Dig.-Int. Electron Devices Meet. 29, 651 (1983).
  4. C. Bulucea and D. Kerr, Solid-State Electron. 41, 1345 (1997).
  5. D. E. Yates, S. Levine, and T. W. Healy, J. Chem. Soc., Faraday Trans. I 70, 1807 (1974).
  6. W. Gui-Hua, Y. Dun, and W. Yao-Lin, Sens. Actuators 11, 221 (1987).
  7. S. Martinoia, L. Lorenzelli, G. Massobrio, P. Conci, and A. Lui, Sens. Actuators B 50, 60 (1998).
  8. A. Poghossian and M. J. Schoning, Electroanalysis 16, 1863 (2004).
  9. A. Poghossian, H. Luth, J. W. Schultze, and M. J. Schoning, Electrochim. Acta 47, 243 (2001).
  10. C. Y. Aw and P. W. Cheung, Proceedings of the IEEE International Conference on Engineering in Medicine and Biology, 1998, 772–773.
  11. H. Wong and H. White Marvin, IEEE Trans. Electron Devices 36, 479 (1989).
  12. T. T. Liu, W. -Y. Chung, F. R. G. Cruz, Y. -L. Tsai, D. G. Pijanowska, W. Torbicz, P. B. Grabiec, and B. Jaroszewicz, IEEE Electron Dev. Solid-State Circuits 2007, 901.
  13. P. K. Chan and D. Y. Chen, IEEE Trans. Circuits Syst. 54, 119 (2007).
  14. W. Y. Chung, C. H. Yang, M. C. Wang, D. G. Pijanowska, and W. Torbicz, Temperature compensation electronics for ISFET readout applications, IEEE Biomedical Circuits and Systems, S1/6–S5-8, 2004.
  15. A. Morgenshtein, L. Sudakov-Boreysha, U. Dinnar, C. G. Jakobson, and Y. Nemirovsky, Sens. Actuators B 98, 18 (2004).
  16. D. Landheer, G. Aers, W. R. McKinnon, M. J. Deen, and J. C. Ranuarez, J. Appl. Phys. 98, 044701 (2005).
  17. P. R. Barabash, R. S. C. Cobbold, and W. B. Wlodarski, IEEE Trans. Electron Devices 34, 1271 (1987).
  18. M. Grattarola and G. Massorbrio, Bioelectronics Handbook: MOSFETs, Biosensors and Neurons (McGraw-Hill, New York, 1998).
  19. Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices (Cambridge University Press, Cambridge, England, 1998).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics