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Evaluation of the charge density in the contact region of organic thin film transistors

J. Appl. Phys. 106, 094503 (2009); doi:10.1063/1.3247195

Published 3 November 2009

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P. Lara Bullejos,1 J. A. Jiménez Tejada,1 F. M. Gómez-Campos,1 M. J. Deen,2 and O. Marinov2
1Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avenida Fuentenueva s/n, 18071 Granada, Spain
2Department of Electrical and Computer Engineering, McMaster University, Hamilton, Ontario L8S 4K1, Canada
This paper presents a procedure to evaluate the charge density in the low conductivity regions between the metal and the accumulated intrinsic channel of an organic thin film transistor (OTFT). This charge links different physical mechanisms in the contacts of OTFTs. The charge density is evaluated in transistors with different metal-organic barriers to study its dependence with the voltage, temperature and the materials forming the contact. ©2009 American Institute of Physics
History: Received 6 August 2009; accepted 17 September 2009; published 3 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/094503/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 84.32.Dd
    Connectors, relays, and switches
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
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REFERENCES (12)
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