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Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory

J. Appl. Phys. 106, 094504 (2009); doi:10.1063/1.3253758

Published 5 November 2009

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Tse Nga Ng (吳子雅), Beverly Russo, and Ana Claudia Arias
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304, USA
Organic ferroelectric field-effect transistors were fabricated by inkjet printing for use as nonvolatile memory. Changes in device hysteresis were measured for 7 days to determine the limiting properties that restrict memory retention time. It was found that shifts in threshold voltage contributed to ~55% of the reduction in transistor current, while decreased dielectric capacitance and reduced semiconductor mobility accounted for ~30% and ~15% of the current decay, respectively. The decrease in mobility and the shifts in threshold voltages are caused by remnant dipolar alignment in the ferroelectric insulator, and the reduction in gate capacitance is explained by injected charges in the ferroelectric dielectric. A method to calibrate and extract the input switching voltage is presented, and this calibration accounts for variations in device characteristics with time and allows the ferroelectric transistors to be used as analog memories. ©2009 American Institute of Physics
History: Received 12 June 2009; accepted 28 September 2009; published 5 November 2009
Permalink: http://link.aip.org/link/?JAPIAU/106/094504/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.50.Gk
    Non-volatile ferroelectric memories
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2009

PUBLICATION DATA

ISSN:
0021-8979 (print)   1089-7550 (online)
Publisher:
AIP is a member of CrossRef AIP

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