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Bonding-site dependence of surface resistivity: CO on epitaxial Cu(100) films

J. Chem. Phys. 126, 124705 (2007); doi:10.1063/1.2672832

Published 23 March 2007

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Chang Liu and R. G. Tobin
Department of Physics and Astronomy, Tufts University, Medford, Massachusetts 02155
The authors have measured the contribution of CO adsorbed on different bonding sites to the resistivity of epitaxial Cu(100) films. Through an analysis of the correlation between surface resistivity and temperature-programed desorption measurements, CO on terraces is found to affect the resistance much more strongly than CO on defect sites. Two possible explanations are considered: a reduced scattering cross section of defect CO owing to the different local electronic structure at defect sites or strong scattering by the bare defect that is not significantly affected by the adsorption of CO. ©2007 American Institute of Physics
History: Received 10 August 2006; accepted 17 January 2007; published 23 March 2007
Permalink: http://link.aip.org/link/?JCPSA6/126/124705/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.25.+i
    Surface conductivity and carrier phenomena
  • 73.61.At
    Electrical properties of metal and metallic alloys (thin films)
  • 68.43.Mn
    Adsorption/desorption kinetics
  • 68.43.Vx
    Thermal desorption
  • 71.55.Ak
    Impurity and defect levels in metals, semimetals, and alloys
  • 73.20.Hb
    Surface impurity and defect levels; energy states of adsorbed species
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0021-9606 (print)   1089-7690 (online)
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