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Optically pumped nuclear magnetic resonance of semiconductors

J. Chem. Phys. 128, 052203 (2008); doi:10.1063/1.2823131

Published 29 January 2008

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Sophia E. Hayes, Stacy Mui, and Kannan Ramaswamy
Department of Chemistry and Center for Materials Innovation, Washington University, St. Louis, Missouri 63130, USA
Optically pumped NMR (OPNMR) of direct gap and indirect gap semiconductors has been an area of active research interest, motivated by both basic science and technological perspectives. Proposals to enhance and to spatially localize nuclear polarization have stimulated interest in this area. Recent progress in OPNMR has focused on exploring the experimental parameter space in order to elucidate details of the underlying photophysics of optical pumping phenomena. The focus of this review is on recent studies of bulk samples of GaAs and InP, namely, the photon energy dependence, the magnetic field dependence, and the phase dependence of OPNMR resonances. Models for the development of nuclear polarization are discussed. ©2008 American Institute of Physics
History: Received 4 September 2007; accepted 16 November 2007; published 29 January 2008
Permalink: http://link.aip.org/link/?JCPSA6/128/052203/1
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KEYWORDS and PACS

Keywords
PACS
  • 76.60.-k
    Nuclear magnetic resonance and relaxation (condensed matter)
  • YEAR: 2008

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0021-9606 (print)   1089-7690 (online)
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