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Journal of The Electrochemical Society

Behavior of Electrodeposited Cd and Pb Schottky Junctions on CH3-Terminated n-Si(111) Surfaces

J. Electrochem. Soc., Volume 156, Issue 2, pp. H123-H128 (2009)

(Published 9 December 2008)

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Stephen Maldonado and Nathan S. Lewis
Beckman Institute and Kavli Nanoscience Institute, Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA
n-Si/Cd and n-Si/Pb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and CH3-terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+-) doped H–Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (Phib) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped CH3-terminated n+-Si(111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+-Si(111). However, electrodeposition on nondegenerately doped CH3-terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by −130 and −347  mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of Phib for contacts on nondegenerately doped n-type CH3–Si(111) surfaces. With either Cd or Pb, current–voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of Phib were obtained on CH3-terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that CH3–Si(111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H–Si(111) surfaces, attesting to the high degree of structural passivation afforded by the CH3–Si surface modification.

©2008 The Electrochemical Society
History: Submitted 2 June 2008; revised 13 October 2008; published 9 December 2008
Permalink: http://dx.doi.org/10.1149/1.3021450

KEYWORDS and PACS

Keywords
PACS
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 81.65.Rv
    Surface passivation
  • 82.45.Qr
    Electrodeposition and electrodissolution
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • YEAR: 2009

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