Photocatalytic Activity Dependence on the Structural Orientation of MOCVD TiO2 Anatase Films
J. Electrochem. Soc., Volume 156, Issue 12, pp. K233-K237 (2009)
(Published 9 October 2009)
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This paper is concerned with the study of metallorganic chemical vapor deposition (MOCVD) anatase film growth, with the aim of assessing the relationship between the TiO2 surface morphology and the photocatalytic properties of the films, particularly their relation to the decomposition of ethylbenzene at 50 µg m−3 in humidified air. We have found an interesting relationship between the structural properties of TiO2 films deposited by MOCVD at 400°C for different deposition times. We observed the maximum efficiency of films in the thickness range of 600–900 nm, while in a higher thickness, this activity relentlessly decreased. From atomic force microscopy analysis, it was ascertained that this reduction was not due to a decrease in the superficial area, which showed a constant roughness of films thicker than 600 nm. From X-ray diffraction analysis, the films always grew in the anatase TiO2 structure, but the thicker the films, the more pronounced the (100) preferred orientation. Thanks also to theoretical considerations, it was concluded that the activity decrease in the 900–1800 nm thickness range was due to the particularly strong increase in the (100) plane-oriented crystallites recorded in the same range, causing a decrease in surface energy and, contemporaneously, a hindering effect on photocatalytic activity.
©2009 The Electrochemical Society
©2009 The Electrochemical Society
| History: | Submitted 1 July 2009; revised 6 August 2009; published 9 October 2009 |
| Permalink: | http://dx.doi.org/10.1149/1.3236502 |
KEYWORDS and PACS
atomic force microscopy,
catalysis,
crystal structure,
MOCVD,
photovoltaic cells,
secondary ion mass spectra,
semiconductor materials,
semiconductor thin films,
surface morphology,
surface roughness,
titanium compounds,
X-ray diffraction
- 68.55.ag
Semiconductor thin film nucleation and growth - 81.15.Gh
Chemical vapor deposition - 82.65.+r
Surface and interface chemistry; heterogeneous catalysis at surfaces - 68.37.Ps
Atomic force microscopy (AFM) of surfaces, interfaces and thin films - 68.35.bg
Surface structure of semiconductors - 79.20.Rf
Atomic, molecular and ion beam impact and interactions with surfaces - YEAR: 2009
RELATED DATABASES
PUBLICATION INFORMATION
0013-4651 (print)






