Enhanced Electrochromic Properties of Ir–Ta Oxide Grown Using a Cosputtering System

J. Electrochem. Soc., Volume 157, Issue 7, pp. J256-J260 (2010)

(Published 21 May 2010)

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ABSTRACT

REFERENCES (24)

Seong Uk Yun,¹ Sung Jong Yoo,² Ju Wan Lim,¹ Sun Ha Park,¹ In Young Cha,¹ and Yung-Eun Sung¹
¹School of Chemical and Biological Engineering and Research Center for Energy Conversion and Storage, Seoul National University, Seoul 151-744, Korea
²Fuel Cell Center, Korea Institute of Science and Technology, Seoul 136-791, Korea

Theauthors deposited iridium tantalum oxide thin films using the reactivecosputtering system. The prepared IrTaO_x thin films were characterized usingX-ray photoelectron spectroscopy, transmission electron microscopy, chronocoloumetry, in situ transmittancemeasurements, and electrochemical impedance spectroscopy. The oxidized iridium in IrTaO_xwas increased by increasing the composition of tantalum. Most ofIrTaO_x thin films have high transmittance modulation, which is attributedby the proton conductivity of tantalum. As a result, theIr₃₃Ta₆₇ oxide thin film shows a performance of 1.4 sof response time, 5×10⁻⁹ cm²/s of ion diffusion coefficient, and 20 cm²/Cof coloration coefficient. The enhanced IrTaO_x thin films are expectedto be candidate of electrochromic materials for fast response time.

©2010 The Electrochemical Society

History:	Submitted 29 December 2009; revised 8 April 2010; published 21 May 2010
Digital Object Identifier	http://dx.doi.org/10.1149/1.3425616

KEYWORDS and PACS

Keywords

diffusion, electrochemical impedance spectroscopy, electrochromism, ionic conductivity, iridium compounds, sputter deposition, thin films, transmission electron microscopy, X-ray photoelectron spectra

PACS