Skip navigation.

  ASMEDL.ORG »  Journals »  J. Heat Transfer »  Volume 132 »  pp. 32402
Adjust text size: Decrease font size Increase font size

Journal of Heat Transfer
Volume: Page/CID:

Previous Article
Equilibrium Molecular Dynamics Study of Lattice Thermal Conductivity/Conductance of Au-SAM-Au Junctions
In this paper, equilibrium molecular dynamics simulations were performed on Au-SAM (self-assembly monolayer)-Au junctions. The SAM consisted of alkanedithiol (–S–(CH2)n–S–) mol...
Next Article
Investigations on Multimode Heat Transfer From a Heated Vertical Plate
The interaction of surface radiation and conduction with natural convection heat transfer from a vertical flat plate assembly, with an embedded heater, has been investigated, both experimentally (usin...

Ultra-Low Thermal Conductivity in Nanoscale Layered Oxides

J. Heat Transfer  -- March 2010 --  Volume 132,  Issue 3, 032402 (6 pages)
doi:10.1115/1.4000052

You are not logged into the ASME Digital Library.
Log in

Author(s):
J. Alvarez-Quintana and Ll. Peralba-Garcia
Department of Physics, Nanomaterials and Microsystems Group, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain

J. L. Lábár
Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest 114 H-1525, Hungary

J. Rodríguez-Viejo
Department of Physics, Nanomaterials and Microsystems Group, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain; MATGAS Research Center, Campus Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain
The cross-plane thermal conductivity of several nanoscale layered oxides SiO2/Y2O3, SiO2/Cr2O3, and SiO2/Al2O3, synthesized by e-beam evaporation was measured in the range from 30 K to 300 K by the 3omega method. Thermal conductivity attains values around 0.5  W/m K at room temperature in multilayer samples, formed by 20 bilayers of 10 nm SiO2/10  nm  Y2O3, and as low as 0.16  W/m K for a single bilayer. The reduction in thermal conductivity is related to the high interface density, which produces a strong barrier to heat transfer rather than to the changes of the intrinsic thermal conductivity due to the nanometer thickness of the layers. We show that the influence of the first few interfaces on the overall thermal resistance is higher than the subsequent ones. Annealing the multilayered samples to 1100°C slightly increases the thermal conductivity due to changes in the microstructure. These results suggest a route to obtain suitable thermal barrier coatings for high temperature applications.

©2010 American Society of Mechanical Engineers

History: Received 21 February 2009; revised 27 July 2009; published 28 December 2009
doi: http://dx.doi.org/10.1115/1.4000052

KEYWORDS and PACS

Keywords
PACS
  • 44.10.+i
    Heat conduction
  • 66.70.-f
    Nonelectronic thermal conduction and heat-pulse propagation in solids
  • 81.15.-z
    Methods of deposition of films and coatings
  • YEAR: 2010

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

Coden:
JHTRAO
ISSN:
0022-1481 (print)   1528-8943 (online)
Publisher:
AIP is a member of CrossRef ASME

REFERENCES (35)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.