Abstract: Total reflection x-ray diffraction studies of the formation and the geometrical structure of Al–Ge(100) interfaces
Total reflection x-ray diffraction studies of Al–Ge(100) interfaces are made.(AIP)

Chemical mechanisms of Schottky barrier formation
Ultrahigh vacuum studies of reactive and unreactive metals on a wide range of semiconductors reveal new systematics of Schottky barrier formation. Surface work function, band bending, and chemical bon...

J. Vac. Sci. Technol. / Volume 16 / Issue 5

You are not logged in to this journal. Log in

Schottky and Bardeen limits for Schottky barriers

J. Vac. Sci. Technol. Volume 16, Issue 5, pp. 1135-1136 (September 1979)

Issue Date: September 1979

ABSTRACT

CITING ARTICLES

Buy This PDF

(US$28)

Connotea

CiteULike

del.icio.us

BibSonomy

	DOWNLOAD CITATION		MySCITATION
	EMAIL ABSTRACT		PERMISSIONS
	ERRATUM ALERT		RESEARCH TOOLKIT
	BLOG THIS ARTICLE		PRINTER FRIENDLY

KEYWORDS and PACS

Keywords

METALS, SEMICONDUCTOR MATERIALS, INTERFACES, SCHOTTKY BARRIER DIODES, ELECTRONIC STRUCTURE, ELECTRONEGATIVITY, FERMI LEVEL, ENERGY GAP, WORK FUNCTIONS

PACS

73.20.-r
Electronic structure and electrical properties of surfaces, interfaces, and thin films Electronic surface states
73.40.Ns
Electronic structure and electrical properties of surfaces, interfaces, and thin films Interfaces Metalnonmetal contacts
YEAR: 1979

PUBLICATION DATA

ISSN:

0022-5355 (print)

Publisher:

AVS

Marvin L. Cohen
Department of Physics, University of California
Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
Department of Physics and Astronomy, University of Hawaii, Honolulu, Hawaii 96822

Anestimate for the minimum (Bardeen limit) and maximum (Schottky limit)of the interface index, S, is calculated. It is shownthat current measurements on high S materials are near orat the maximum value for S.