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Reconstruction on rows and steps of Si(112) and Si(223)
We have investigated Si(112) and Si(223) by using scanning tunneling microscopy and low-energy electron diffraction. A well-developed two-dimensional long-range order of atomic structures in the corre...

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Tunneling microscopy of silicon and germanium: Si(111)7×7, SnGe(111)7×7, GeSi(111)5×5, Si(111)9×9, Ge(111)2×8, Ge(100)2×1, Si(110)5×1

J. Vac. Sci. Technol. A Volume 6, Issue 2, pp. 472-477 (March 1988)

Issue Date: March 1988
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Bs
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces (including bicrystals) Geometry; atomic and molecular orientation; crystal shapes; surface topography
  • 61.16.Di
    Structure of liquids and solids; crystallography Other determination of structures Electron microscopy determinations (including scanning tunneling electron microscopy methods)
  • 68.35.Dv
    Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Solid surfaces and solidsolid interfaces (including bicrystals) Composition; defects and impurities
  • YEAR: 1988

PUBLICATION DATA

ISSN:
0734-2101 (print)   1520-8559 (online)
Publisher:
AIP is a member of CrossRef AVS
R. S. Becker, B. S. Swartzentruber, and J. S. Vickers
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
The tunneling microscope has been used to study the low-index faces of silicon and germanium. Si(111) 7×7 and 9×9, GeSi(111) 5×5, and SnGe(111) 7×7 are discussed in the light of the dimer–adatom–stacking fault structural model. Ge(111) 2×8 is compared to Si(111), Ge(100) is shown and compared to Si(100), and new structures on the Si(110) 5×1 surface are shown.
History: Received 23 July 1987; accepted 28 October 1987
Permalink: http://dx.doi.org/10.1116/1.575399

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