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Optical characterization of InN layers grown by high-pressure chemical vapor deposition

J. Vac. Sci. Technol. A Volume 26, Issue 4, pp. 1023-1026 (July 2008)

Published 1 July 2008
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    III-V semiconductors: fabrication, treatment, testing and analysis
  • 78.66.Fd
    Optical properties of III-V semiconductors (thin films)
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 81.15.Gh
    Chemical vapor deposition
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0734-2101 (print)   1520-8559 (online)
Publisher:
AIP is a member of CrossRef AVS
M. Alevli, R. Atalay, G. Durkaya, A. Weesekara, A. G. U. Perera, and N. Dietz
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303

R. Kirste and A. Hoffmann
Tecische Universität Berlin, Germany
The optical properties of InN layers grown by high-pressure chemical vapor deposition have been studied. Raman, infrared reflection, and transmission spectroscopy studies have been carried out to investigate the structural and optical properties of InN films grown on sapphire and GaN/sapphire templates. Results obtained from Raman and IR reflectance measurements are used to estimate the free carrier concentrations, which were found to be varying from mid 1018 to low 1020  cm−3. The values for free carrier concentrations are compared to optical absorption edge estimates obtained from optical transmission spectra analysis. The analysis shows that optical absorption edge for InN shifts below 1.1  eV as the free carrier concentration decreases to low 1018  cm−3. ©2008 American Vacuum Society
History: Received 9 November 2007; accepted 17 March 2008; published 1 July 2008
Permalink: http://dx.doi.org/10.1116/1.2908736

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