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Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach

J. Vac. Sci. Technol. A Volume 27, Issue 3, pp. 461-464 (May 2009)

Published 30 March 2009
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.37.-d
    Microscopy of surfaces, interfaces, and thin films
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0734-2101 (print)   1520-8559 (online)
Publisher:
AIP is a member of CrossRef AVS
Bharat Jalan, Roman Engel-Herbert, Nicholas J. Wright, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050
A hybrid molecular beam epitaxy approach for atomic-layer controlled growth of high-quality SrTiO3 films with scalable growth rates was developed. The approach uses an effusion cell for Sr, a plasma source for oxygen, and a metal-organic source (titanium tetra isopropoxide) for Ti. SrTiO3 films were investigated as a function of cation flux ratio on (001) SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. Growth conditions for stoichiometric insulating films were identified. Persistent (>180 oscillations) reflection high-energy electron diffraction oscillation characteristic of layer-by-layer growth were observed. The full widths at half maximum of x-ray diffraction rocking curves were similar to those of the substrates, i.e., 34  arc sec on LSAT. The film surfaces were nearly ideal with root mean square surface roughness values of less than 0.1 nm. The relationship between surface reconstructions, growth modes, and stoichiometry is discussed. ©2009 American Vacuum Society
History: Received 11 February 2009; accepted 3 March 2009; published 30 March 2009
Permalink: http://dx.doi.org/10.1116/1.3106610

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