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Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy

J. Vac. Sci. Technol. A Volume 27, Issue 6, pp. 1365-1368 (November 2009)

Published 28 October 2009
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 61.50.Nw
    Crystal stoichiometry
  • 79.20.Rf
    Atomic, molecular and ion beam impact and interactions with surfaces
  • 52.77.-j
    Plasma applications
  • 68.37.Ma
    Scanning transmission electron microscopy (STEM) of surfaces, interfaces and thin films
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
0734-2101 (print)   1520-8559 (online)
Publisher:
AIP is a member of CrossRef AVS
Bharat Jalan, Joël Cagnon, Thomas E. Mates, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050
Secondary ion mass spectroscopy (SIMS) was used to investigate carbon impurity concentrations in stoichiometric SrTiO3 films grown by a hybrid molecular beam epitaxy approach that uses an effusion cell to supply strontium, a rf plasma source for oxygen and a metal organic titanium source (titanium tetra isopropoxide). The carbon concentration in the films was measured as a function of growth parameters. At sufficiently high growth temperatures (>800 °C), the films contain a few ppm of carbon. The challenges in accurately quantifying low carbon concentrations are discussed. A carbon-containing contamination layer is detected on the surfaces of SrTiO3 substrates and air-exposed films by SIMS and in scanning transmission electron microscopy. The contamination layer could be removed by high-temperature predeposition oxygen plasma cleaning. ©2009 American Vacuum Society
History: Received 2 September 2009; accepted 28 September 2009; published 28 October 2009
Permalink: http://dx.doi.org/10.1116/1.3253355

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