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Testing extreme ultraviolet optics with visible-light and extreme ultraviolet interferometry
Optics for extreme ultraviolet (EUV) lithography arguably have the most strict fabrication tolerances of any optical systems fabricated to date, and the development of EUV lithography pushes advanced ...

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Sub-70 nm extreme ultraviolet lithography at the Advanced Light Source static microfield exposure station using the engineering test stand set-2 optic

J. Vac. Sci. Technol. B Volume 20, Issue 6, pp. 2829-2833 (November 2002)

Issue Date: November 2002
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KEYWORDS and PACS

Keywords
PACS
  • 85.40.Hp
    Electronic and magnetic devices; microelectronics Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology Lithography, masks and pattern transfer
  • YEAR: 2002

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PUBLICATION DATA

ISSN:
1071-1023 (print)   1520-8567 (online)
Publisher:
AIP is a member of CrossRef AVS
Patrick Naulleau, Kenneth A. Goldberg, and Erik H. Anderson
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720

David Attwood
EECS Department, University of California, Berkeley, California 94720

Phillip Batson
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Jeffrey Bokor
Center for X-Ray Optics, Lawrence Berkeley National Laboratory and
EECS Department, University of California, Berkeley, California 94720

Paul Denham, Eric Gullikson, Bruce Harteneck, Brian Hoef, Keith Jackson, Deirdre Olynick, Seno Rekawa, and Farhad Salmassi
Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California 94720

Ken Blaedel, Henry Chapman, Layton Hale, Paul Mirkarimi, Regina Soufli, Eberhard Spiller, Don Sweeney, John Taylor, and Chris Walton
Lawrence Livermore National Laboratory, P. O. Box 808, Livermore, California 94550

Donna O'Connell and Daniel Tichenor
Sandia National Laboratories, P. O. Box 969, Livermore, California 94551

Charles W. Gwyn, Pei-Yang Yan, and Guojing Zhang
Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95052
Static microfield printing capabilities have recently been integrated into the extreme ultraviolet interferometer operating at the Advanced Light Source synchrotron radiation facility at Lawrence Berkeley National Laboratory. The static printing capabilities include a fully programmable scanning illumination system enabling the synthesis of arbitrary illumination coherence (pupil fill). This new exposure station has been used to lithographically characterize the static imaging performance of the Engineering Test Stand Set-2 optic. Excellent performance has been demonstrated down to the 70 nm equal line/space level with focus latitude exceeding 1 µm and dose latitude of approximately 10%. Moreover, equal line/space printing down to a resolution of 50 nm has been demonstrated using resolution-enhancing pupil fills. ©2002 American Vacuum Society.
History: Received 28 May 2002; accepted 7 October 2002
Permalink: http://dx.doi.org/10.1116/1.1524976

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