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Optical properties of n-doped Ga1−xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5−50  µm) IR range

J. Vac. Sci. Technol. B Volume 26, Issue 1, pp. 52-55 (January 2008)

Published 3 January 2008
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KEYWORDS and PACS

Keywords
PACS
  • 63.20.dd
    Measurements of phonon states, normal modes and phonon dispersion
  • 78.66.Fd
    Optical properties of III-V semiconductors (thin films)
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 78.20.Ci
    Optical constants
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
1071-1023 (print)   1520-8567 (online)
Publisher:
AIP is a member of CrossRef AVS
A. B. Weerasekara, Z. G. Hu, N. Dietz, and A. G. U. Perera
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303

A. Asghar and M. H. Kane
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332

M. Strassburg
Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303 and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332

I. T. Ferguson
School of Electrical and Computer Engineering and School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332
Optical properties of n-doped (Si) hexagonal Ga1−xMnxN films (x=0.015) grown by metal-organic chemical-vapor deposition (MOCVD) on c-plane sapphire substrates have been studied by infrared reflectance spectroscopy. The effect of free carriers on GaMnN optical phonons, namely E1(LO) and E1(TO), is explored. It is found that the frequency of E1(LO) increases with increasing free carrier concentration. The absorption coefficient (alpha) is calculated for the 200−2000  cm−1 range and the maximum value of alpha is found to be ~105  cm−1 at a frequency of 560  cm−1. With increasing free carrier concentration, the FWHM of the absorption peak increased by 35%−40% as compared to an unintentionally doped (<1×1016  cm−3) film. ©2008 American Vacuum Society
History: Received 6 July 2007; accepted 5 November 2007; published 3 January 2008
Permalink: http://dx.doi.org/10.1116/1.2819259

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