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Si-containing block copolymers for self-assembled nanolithography

J. Vac. Sci. Technol. B Volume 26, Issue 6, pp. 2489-2494 (November 2008)

Published 1 December 2008
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KEYWORDS and PACS

Keywords
PACS
  • 81.16.Nd
    Nanolithography in nanofabrication and processing
  • 81.16.Dn
    Self-assembly in nanofabrication and processing
  • 61.41.+e
    Structure of polymers, elastomers, and plastics
  • 81.16.Rf
    Nanoscale pattern formation in nanofabrication and processing
  • 68.55.am
    Polymer and organic thin film nucleation and growth
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
1071-1023 (print)   1520-8567 (online)
Publisher:
AIP is a member of CrossRef AVS
C. A. Ross, Y. S. Jung, V. P. Chuang, and F. Ilievski
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

J. K. W. Yang
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

I. Bita and E. L. Thomas
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

Henry I. Smith and K. K. Berggren
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

G. J. Vancso
MESA+ Research Institute, University of Twente, P.O. Boc 217, 7500 Enschede, The Netherlands

J. Y. Cheng
IBM Almaden Research Center, San Jose, California
Block copolymers can self-assemble to generate patterns with nanoscale periodicity, which may be useful in lithographic applications. Block copolymers in which one block is organic and the other contains Si are appealing for self-assembled lithography because of the high etch contrast between the blocks, the high etch resistance of the Si-containing block, and the high Flory–Huggins interaction parameter, which is expected to minimize line edge roughness. The locations and long range order of the microdomains can be controlled using shallow topographical features. Pattern generation from poly(styrene)-poly(ferrocenyldimethylsilane) and poly(styrene)-poly(dimethylsiloxane) block copolymers, and the subsequent pattern transfer into metal, oxide, and polymer films, is described. ©2008 American Vacuum Society
History: Received 18 June 2008; accepted 18 August 2008; published 1 December 2008
Permalink: http://dx.doi.org/10.1116/1.2981079

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