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Low temperature scanning tunneling microscopy wave-function imaging of InAs/GaAs cleaved quantum dots with similar height

J. Vac. Sci. Technol. B Volume 27, Issue 2, pp. 891-894 (March 2009)

Published 30 March 2009
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KEYWORDS and PACS

Keywords
PACS
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 73.61.Ey
    Electrical properties of III-V semiconductors (thin films)
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films
  • YEAR: 2009

PUBLICATION DATA

ISSN:
1071-1023 (print)   1520-8567 (online)
Publisher:
AIP is a member of CrossRef AVS
J. C. Girard, A. Lemaître, A. Miard, C. David, and Z. Z. Wang
Laboratoire de Photonique et de Nanostructures, CNRS, route de Nozay 91460 Marcoussis, France
The authors report on cross-sectional scanning tunneling microscopy/scanning tunneling spectroscopy and subsequent electronic wave-function imaging at a low temperature (T=77  K) on cleaved In(Ga)As/GaAs quantum dots (QDs). The dI/dV spectra exhibit a set of discrete and well-defined peaks in the QD conduction band. Differential conductance dI/dV maps, obtained on a series of individual dots, display clearly the real space spatial variation at the nanometer scale of the envelope (amplitude) of the electron wave functions for the successive ground state and excited states. Wave-function symmetry of the first two excited states are identified in the STS measurements. ©2009 American Vacuum Society
History: Received 3 September 2008; accepted 13 October 2008; published 30 March 2009
Permalink: http://dx.doi.org/10.1116/1.3013854

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