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Fabrication and characterization of novel hybrid green light emitting diodes based on substituting n-type ZnO for n-type GaN in an inverted p-n junction

J. Vac. Sci. Technol. B Volume 27, Issue 3, pp. 1784-1788 (May 2009)

Published 29 May 2009
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 78.66.Hf
    Optical properties of II-VI semiconductors (thin films)
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • 78.55.Et
    Photoluminescence in II-VI semiconductors
  • 78.55.Cr
    Photoluminescence in III-V semiconductors
  • 78.66.Fd
    Optical properties of III-V semiconductors (thin films)
  • YEAR: 2009

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PUBLICATION DATA

ISSN:
1071-1023 (print)   1520-8567 (online)
Publisher:
AIP is a member of CrossRef AVS
C. Bayram and M. Razeghi
Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208

D. J. Rogers and F. Hosseini Teherani
Nanovation, 103B Rue de Versailles, 91400 Orsay, France
Details of the fabrication and characterization of hybrid green light emitting diodes, composed of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN on AlN/sapphire, are reported. Scanning electron microscope, atomic force microscopy, high resolution x-ray diffraction, and photoluminescence were used to study the hybrid device. The effects of solvents, annealing, and etching on n-ZnO are discussed. Successful hybridization of ZnO and (In)GaN into a green light emitting diode was realized. ©2009 American Vacuum Society
History: Received 8 December 2008; accepted 16 March 2009; published 29 May 2009
Permalink: http://dx.doi.org/10.1116/1.3116590

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