Physics of Plasmas
Feedback | Help | Exit
Physics of Plasmas
   
 
 
 
Previous Article
Motion of ions influenced by enhanced Alfvén waves
In this paper we discuss the dynamics of an ion interacting with large-amplitude Alfvén waves. The objective of the present analysis is to attain an in-depth understanding of the ion-pickup pro...
Next Article
Optimization of soft x-ray emission from stagnating compact toroidal plasmas: A computational study
Computational simulations aimed at optimizing the high-energy, high-power, multikilovolt electromagnetic radiation emitted by a rapidly moving compact toroidal (CT) plasma which stagnates against a st...

Steady state multipactor and dependence on material properties

Phys. Plasmas 4, 863 (1997); doi:10.1063/1.872177

Issue Date: March 1997

You are not logged in to this journal. Log in

R. A. Kishek, Y. Y. Lau, and D. Chernin
Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104
The interaction of multipactor discharge and an rf circuit is analyzed with the use of a simple model, in which the multipactor electrons are in the form of a single sheet that is released from the surface with a monoenergetic velocity. An explicit formula is derived for the saturation level of multipactor current in steady state. This formula is given in terms of the secondary electron yield properties of the multipactoring surfaces and the level of the external rf drive. It is valid when the quality factor Q of the rf circuit is higher than 10, in which case the space charge effects do not contribute significantly to the saturation level. When it occurs, the steady state multipactor may consume tens of percents of the external rf power that is needed to sustain the gap voltage. Numerical computations determine the accessibility to steady state from the transient buildup. In particular, they suggest various conditions for the multipactor to exhibit in a burst mode or in a steady state mode. The dynamic linkage of the rf circuit and material properties allows the construction of the susceptibility diagram for various materials, within the limitations imposed by the present model. ©1997 American Institute of Physics.
History: Received 2 July 1996; accepted 12 November 1996
Permalink: http://link.aip.org/link/?PHPAEN/4/863/1
BUY THIS ARTICLE   (US$28)
Download PDF (220 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 84.47.+w
    Electronics: radiowave and microwave technology; direct energy conversion and storage Vacuum tubes
  • YEAR: 1996-97

PUBLICATION DATA

ISSN:
1070-664X (print)   1089-7674 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (19)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. R. M. Vaughan, IEEE Trans. Electron Devices ED-35, 1172 (1988).
  2. S. Riyopoulos, D. Chernin, and D. Dialetis, Phys. Plasmas 2, 3194 (1995).
  3. F. Mako and W. Peter, IEEE Proceedings of the 1993 Particle Accelerator Conference (Institute of Electrical and Electronics Engineers, Piscataway, NJ, 1993) [IEEE Cat. No. 93CH3279–7], p. 2702.
  4. A. S. Gilmore, Microwave Tubes (Artech House, Norwood, MA, 1986), p. 474.
  5. G. A. Loew and J. W. Wang, Proceedings of the 1989 Particle Accelerator Conference (Institute of Electrical and Electronics Engineers, Picataway, NJ, 1989) [IEEE Cat. No. 89CH2669–0], p. 1137; K. J. Kleman, Proceedings of the 1993 Particle Accelerator Conference (Institute of Electronics and Electrical Engineers, Piscataway, NJ, 1993) [IEEE Cat. No. 93CH3279–7], p. 924.
  6. A. D. Woode and J. Petit, Microwave J. January, 142, (1992).
  7. J. R. M. Vaughan, IEEE Trans. Electron Devices ED-15, 883 (1968).
  8. R. Kishek and Y. Y. Lau, Phys. Rev. Lett. 75, 1218 (1995).
  9. R. Kishek and Y. Y. Lau, Phys. Plasmas 3, 1481 (1996).The phasefocusing mechanism unearthed in this reference may result in a very narrow bunch despite the mutual repulsion among the space charges. Hence we ignore the electrostatic repulsion here. Electrostatic repulsion among the space charges was studied in Refs. 1–3 and 19.
  10. A distribution in the initial velocity of secondaries requires particle simulations in general. Analysis of initial velocity distributions have been studied recently by Riyopoulos et al., in Ref. 19.
  11. J. R. M. Vaughan, IEEE Trans. Electron Devices ED-36, 1963 (1989);
    12. A. Shih and C. Hor, IEEE Trans. Electron Devices ED-40, 824 (1993);
    C. K. Birdsall and W. B. Bridges, Electron Dynamics of Diode Regions (Academic, New York, 1966).
  12. Linear Accelerators, edited by P. M. Lapostolle and A. L. Septier (North-Holland, Amsterdam 1970), p. 917.
  13. If the transient multipactor current builds up to very high values, space charge effects will set in and may cause saturation, as investigated by Riyopoulos et al., in Ref. 19.
  14. O. Hachenberg and W. Brauer, Adv. Electron. Electron Phys. XI, 413 (1959).
  15. A. J. Hatch and H. B. Williams, J. Appl. Phys. 25, 417 (1954).
  16. A. J. Hatch and H. B. Williams, Phys. Rev. 112, 681 (1958).
  17. P. F. Clancy, Microwave J., March, 77 (1978).
  18. N. Rozario, H. F. Lenzig, K. F. Reardon, M. S. Zarro, and C. G. Baran, IEEE Trans. Microwave Theory Technol. MTT-42, 558 (1994).
  19. S. Riyopoulos, D. Chernin, and D. Dialetis, "Effect of random secondary delay times and emission velocities in electron multipactor," to appear in IEEE Trans. Electron Devices (1997).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics