Electric-field driven donor-based charge qubits in semiconductors

Abstract

References (27)

Citing Articles

Download: PDF (346 kB) or Buy this Article (US$25) (Use Article Pack)

Belita Koiller,^1,2 Xuedong Hu,³ and S. Das Sarma¹
¹Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, USA
²Instituto de Física, Universidade Federal do Rio de Janeiro, 21945, Rio de Janeiro, Brazil
³Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, USA

Received 20 October 2005; revised 5 December 2005; published 20 January 2006

Wetheoretically investigate donor-based charge qubit operation driven by external electricfields. We consider initially a single electron bound to ashallow-donor pair in GaAs: This system, which is closely relatedto the homopolar molecular ion H₂⁺, allows the basic physicsof the problem to be presented. In the case ofSi, heteropolar configurations such as P-Sb⁺ pairs are also considered.For both homopolar and heteropolar pairs, the multivalley conduction bandstructure of Si leads to short-period oscillations of the tunnel-couplingstrength as a function of the relative position of thedonors. However, for any fixed donor configuration, the response ofthe bound electron to a uniform electric field in Siis qualitatively very similar to the GaAs case, with novalley quantum-interference-related effects, leading to the conclusion that valley interferencedoes not prevent the coherent manipulation of donor-based charge qubitsby external electric fields.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.73.045319
DOI:	10.1103/PhysRevB.73.045319
PACS:	85.35.Be; 71.55.Cn; 85.35.Gv; 03.67.Lx 85.35.Be Quantum well devices including quantum dots, quantum wires, etc 71.55.Cn Impurity and defect levels in elemental semiconductors 85.35.Gv Single electron devices 03.67.Lx Quantum computation YEAR: 2006
KEYWORDS:	gallium arsenide, silicon, semiconductor quantum dots, III-V semiconductors, elemental semiconductors, impurity states, bound states, conduction bands, quantum gates

REFERENCES (27)

View in Separate Window/Tab

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 62, 012306 (2000).
T. Tanamoto, Phys. Rev. A 61, 022305 (2000).
A. J. Skinner, M. E. Davenport, and B. E. Kane, Phys. Rev. Lett. 90, 087901 (2003).
S. D. Barrett and G. J. Milburn, Phys. Rev. B 68, 155307 (2003).
L. C. L. Hollenberg, A. S. Dzurak, C. Wellard, A. R. Hamilton, D. J. Reilly, G. J. Milburn, and R. G. Clark, Phys. Rev. B 69, 113301 (2004).
Y. Makhlin, G. Schön, and A. Schnirman, Rev. Mod. Phys. 73, 357 (2000).
T. Hayashi, T. Fujisawa, H. D. Cheong, Y. H. Jeong, and Y. Hirayama, Phys. Rev. Lett. 91, 226804 (2003).
J. R. Petta, A. C. Johnson, C. M. Marcus, M. P. Hanson, and A. C. Gossard, Phys. Rev. Lett. 93, 186802 (2004).
J. Gorman, E. G. Emiroglu, D. G. Hasko, and D. A. Williams, Phys. Rev. Lett. 95, 090502 (2005).
X. Hu, B. Koiller, and S. Das Sarma, Phys. Rev. B 71, 235332 (2005).
B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. Lett. 88, 027903 (2002).
B. Koiller, X. Hu, and S. Das Sarma, Phys. Rev. B 66, 115201 (2002).
A. S. Martins, R. B. Capaz, and B. Koiller, Phys. Rev. B 69, 085320 (2004).
S. T. Pantelides, Rev. Mod. Phys. 50, 797 (1978).
C. J. Wellard, L. C. L. Hollenberg, F. Parisoli, L. Kettle, H.-S. Goan, J. A. L. McIntosh, and D. N. Jamieson, Phys. Rev. B 68, 195209 (2003).
B. Koiller, R. B. Capaz, X. Hu, and S. Das Sarma, Phys. Rev. B 70, 115207 (2004).
G. D. J. Smit, S. Rogge, J. Caro, and T. M. Klapwijk, Phys. Rev. B 68, 193302 (2003).