Probing hydrogenated amorphous silicon surface states by spectroscopic and real-time second-harmonic generation

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I. M. P. Aarts, J. J. H. Gielis, M. C. M. van de Sanden, and W. M. M. Kessels
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Received 12 April 2005; revised 28 October 2005; published 26 January 2006

Thesecond harmonic generation (SHG) signal from hydrogenated amorphous silicon (a-Si:H)thin films is measured in situ and in real-time duringfilm growth. Polarization and spectral dependences of the SHG radiationare investigated for as-deposited films and after subsequent molecular oxygendosing in order to confirm the sensitivity of SHG toa-Si:H surface states. On the basis of these experiments, weconclude the SHG radiation is partly generated at the surface(a-Si:H/vacuum interface) and the microscopic origin of the SHG signal appearsto be dangling and surface Si-Si bonds. This has beensupported by simulations of the nonlinear surface response for thedifferent polarization configurations using an excitonic line shape model withtwo resonances. Furthermore, real-time measurements during film growth, up toa film thickness of 412 nm, demonstrate the potential of thetechnique to monitor surface states during the deposition process ofa-Si:H films.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.73.045327
DOI:	10.1103/PhysRevB.73.045327
PACS:	73.20.At; 42.65.Ky 73.20.At Surface states, band structure, electron density of states 42.65.Ky Optical frequency conversion; optical harmonic generation, including higher-order harmonic generation YEAR: 2006
KEYWORDS:	silicon, hydrogen, elemental semiconductors, amorphous semiconductors, semiconductor thin films, surface states, optical harmonic generation, bonds (chemical)

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