Temperature influence on the production of nanodot patterns by ion beam sputtering of Si(001)

Abstract

References (40)

Citing Articles

Download: PDF (396 kB) or Buy this Article (US$25) (Use Article Pack)

R. Gago,¹ L. Vázquez,² O. Plantevin,^3,4 J. A. Sánchez-García,² M. Varela,⁵ M. C. Ballesteros,⁵ J. M. Albella,² and T. H. Metzger⁴
¹Centro de Micro-Análisis de Materiales and Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
²Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid, Spain
³CSNSM CNRS/IN2P3, Université Paris-Sud, UMR8609, ORSAY-Campus, F-91405 Orsay Cedex, France
⁴Anomalous Scattering Beamline (ID-01), European Synchrotron Radiation Facility, F-38043 Grenoble Cedex, France
⁵Departamento de Física, Universidad Carlos III de Madrid, E-28911 Leganés, Spain

Received 26 October 2005; revised 2 February 2006; published 11 April 2006

Thetemperature influence (T=300–625 K) on the production of nanodot patterns by1 keV Ar⁺ ion beam sputtering (IBS) of Si(001) is addressed.The surface morphology was studied by atomic force microscopy, transmissionelectron microscopy, and grazing x-ray scattering techniques. Three different Tregimes are observed: (i) First, the pattern does not changesignificantly up to 425 K, with the nanodot volume being mostlycrystalline. (ii) Second, in the 425–525 K range, the pattern isstill present but the nanodot height decreases with T andthe crystalline core contribution to the dot morphology progressively diminishes.This trend is accompanied by a continuous decrease of theaverage interdot distance and an emerging strain in the crystallinelattice of the nanostructures. Above 500 K, the pattern is mainlydominated by the amorphous surface layer. (iii) Finally, the patternformation is precluded above 550 K, yielding a flat and featurelesssurface. These results not only have technological implications regarding thecontrol over the pattern characteristics, but also provide relevant informationto contrast the existing theories of pattern formation by IBS.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.73.155414
DOI:	10.1103/PhysRevB.73.155414
PACS:	81.65.Cf; 81.16.Rf; 68.37.Ps; 61.10.Nz 81.65.Cf Surface cleaning, etching, patterning 81.16.Rf Nanoscale pattern formation in nanofabrication and processing 68.37.Ps Atomic force microscopy (AFM) of surfaces, interfaces and thin films 61.10.Nz X-ray diffraction YEAR: 2006
KEYWORDS:	silicon, nanostructured materials, elemental semiconductors, amorphous semiconductors, nanopatterning, sputter etching, ion beam effects, ion beam applications, surface morphology, atomic force microscopy, transmission electron microscopy, X-ray scattering

REFERENCES (40)

View in Separate Window/Tab

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

T. Shimizu-Iwayama, S. Nakao, and K. Saitoh, Appl. Phys. Lett. 65, 1814 (1994) 1814.
J. Stangl, V. Holy, and G. Bauer, Rev. Mod. Phys. 76, 725 (2004).
F. Frost, A. Schindler, and F. Bigl, Phys. Rev. Lett. 85, 4116 (2000).
S. Facsko, T. Dekorsy, and H. Kurz, Phys. Rev. B 63, 165329 (2001).
R. Cuerno and A.-L. Barabási, Phys. Rev. Lett. 74, 4746 (1995).
B. Kahng, H. Jeong, and A.-L. Barabási, Appl. Phys. Lett. 78, 805 (2001).
M. Castro, R. Cuerno, L. Vázquez, and R. Gago, Phys. Rev. Lett. 94, 016102 (2005);

ibid. 94, 139601 (2005)

ibid. 96, 086101 (2006)

S. Facsko, T. Bobek, A. Stahl, H. Kurz, and T. Dekorsy, Phys. Rev. B 69, 153412(R) (2004).
S. Vogel and S. J. Linz, Phys. Rev. B 72, 035416 (2005).
M. A. Makeev and A.-L. Barabási, Appl. Phys. Lett. 71, 2800 (1997).
R. Gago, L. Vázquez, R. Cuerno, M. Varela, C. Ballesteros, and J. M. Albella, Appl. Phys. Lett. 78, 3316 (2001).
P. Sigmund, Phys. Rev. 184, 383 (1969).
T. Bobek, S. Facsko, H. Kurz, T. Dekorsy, M. Xu, and C. Teichert, Phys. Rev. B 68, 085324 (2003).
B. Ziberi, F. Frost, Th. Höche, and B. Rauschenbach, Phys. Rev. B 72, 235310 (2005).
B. S. Swartzentruber, Phys. Rev. Lett. 76, 459 (1996).
D. J. Shu, F. Liu, and X. G. Gong, Phys. Rev. B 64, 245410 (2001).
R. M. Tromp and M. Mankos, Phys. Rev. Lett. 81, 1050 (1998).
J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 82, 2330 (1999).
A.-D. Brown and J. Erlebacher, Phys. Rev. B 72, 075350 (2005).
T. K. Chini, M. K. Sanyal, and S. R. Bhattacharyya, Phys. Rev. B 66, 153404 (2002).
T. Mayer, E. Chason, and A. J. Howard, J. Appl. Phys. 76, 1633 (1994).
G. Ozaydin, A. S. Özcan, Y. Wang, K. F. Ludwig, H. Zhou, R. L. Headrick, and D. P. Siddons, Appl. Phys. Lett. 87, 163104 (2005).