Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures

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Igor L. Kuskovsky,^1,2 Y. Gu,² Y. Gong,² H. F. Yan,² J. Lau,^2,4 I. C. Noyan,² G. F. Neumark,² O. Maksimov,³ X. Zhou,³ M. C. Tamargo,³ V. Volkov,⁴ Y. Zhu,⁴ and L. Wang⁵
¹Department of Physics, Queens College of CUNY, Flushing, New York 11367, USA
²Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
³Department of Chemistry, City College of CUNY, New York, New York 10036, USA
⁴Materials Science Division, Brookhaven National Laboratory, Upton, New York 11973, USA
⁵Charles Evans & Associates, 810 Kifer, Sunnyvale, California 94086, USA

Received 22 February 2006; revised 6 April 2006; published 8 May 2006

Along-standing problem for ZnSe (and related alloys) has been toobtain good p-type doping. Recent work has given about anorder-of-magnitude improvement in such doping by use of Te asa "codopant" to facilitate the introduction of an acceptor dopant(N), since it is known that p-ZnTe can be obtainedquite readily; the Te was introduced in submonolayer quantities viaplanar ( delta ) doping during molecular beam epitaxy. Here, we examinethe mechanism of this improved doping. We show that itresides in the formation of ZnTe-rich nanoislands, with the Nembedded in these. This result is obtained by studies involvingtransmission electron microscopy, high-resolution x-ray diffraction, secondary-ion mass spectroscopy, andtemperature quenching of photoluminescence. We note that these nanoislands appearquite unique, in providing doping of semiconductors, and thus areof great interest of their own.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.73.195306
DOI:	10.1103/PhysRevB.73.195306
PACS:	78.67.Pt; 78.66.Hf; 81.07.Ta 78.67.Pt Optical properties of multilayers and superlattices 78.66.Hf Optical properties of II–VI semiconductors (thin films) 81.07.Ta Quantum dots: fabrication and characterization YEAR: 2006
KEYWORDS:	zinc compounds, II-VI semiconductors, wide band gap semiconductors, nitrogen, nanostructured materials, semiconductor doping, transmission electron microscopy, X-ray diffraction, secondary ion mass spectra, photoluminescence

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