You are not logged in to this journal. Log in    |   Subscription Information

Phys. Rev. B 73, 245336 (2006) [7 pages]

Interplay between the Coulomb explosion and vicinage effects studied using H<sub>2</sub><sup>+</sup> molecules under channeling conditions

R. C. Fadanelli, P. L. Grande, M. Behar, and J. F. Dias
Instituto de Física, Federal University of Rio Grande do Sul, Avenida Bento Gonçalves, 9500, CEP 91501-970 Porto Alegre (RS), Brazil

K. Czerski
Institute of Physics, University of Szczecin, Szczecin, Poland

G. Schiwietz
Hahn-Meitner Institut, Abteilung SF4, Glienicker Strasse 100, D-14109 Berlin, Germany
Received 7 December 2005; revised 12 May 2006; published 29 June 2006

The aim of this work is to investigate how the mean energy loss and straggling due to H<sub>2</sub><sup>+</sup> molecules interacting with silicon are affected by the Coulomb explosion and vicinage effects. To that end, a SIMOX-type sample made up of 18O and with an appropriate 18O marker grown over the surface of crystalline Si was employed, allowing to carry out the measurements through the 18O(p,alpha)15N resonant reaction at 151.2  keV under channeling and random directions. The results show that the mean energy loss associated with the Coulomb explosion and vicinage effects are similar and amount each to about 2% of the total mean energy loss. The comparison of the energy straggling obtained for molecular beams at random and the well-aligned <100> direction shows a larger value for the aligned case, which is interpreted as a result of the Coulomb explosion along the channel direction. The experimental results are also discussed in terms of Monte Carlo simulations.

©2006 The American Physical Society

URL: http://link.aps.org/doi/10.1103/PhysRevB.73.245336
DOI: 10.1103/PhysRevB.73.245336
PACS: 68.55.Ln; 34.50.Bw; 61.85.+p; 36.40.-c
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 34.50.Bw
    Energy loss and stopping power (atoms and molecules)
  • 61.85.+p
    Channeling phenomena including blocking, energy loss, etc
  • 36.40.-c
    Atomic and molecular clusters
  • YEAR: 2006
KEYWORDS: silicon, Monte Carlo methods, elemental semiconductors, molecular beams, energy loss of particles, channelling

REFERENCES (16)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.



A new free weekly publication from APS

Physics - A new free weekly publication from APS
Please visit physics.aps.org
 
Article Tools