Terahertz emission from Ga_1–xIn_xSb

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Ricardo Ascazubi and Ingrid Wilke
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA

K. J. Kim and Partha Dutta
Department of Electrical and Computer Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180

Received 24 March 2006; revised 22 May 2006; published 17 August 2006

Wereport an experimental study on terahertz (THz) emission from Ga_1–xIn_xSbwith 0x1. THz emission is excited by femtosecond near-infrared laserpulses. For this material system THz emission is maximized foran In mole fraction x [approximate] 0.5. The maximum in THz emissionoccurs as a result of carrier compensation (N_AN_B) for thisspecific material composition. The THz emission from n-type InSb istwice as large than that from p-type GaSb. The THzemission from Ga_1–xIn_xSb is explained according to the photo-Dember model.The Ga_1–xIn_xSb material system enabled the study of the influenceof carrier concentrations on the THz emission process in narrowband gap semiconductors. Our study demonstrates the existence of acompromise between the positive effect of high electron temperature providedby narrow band gap materials and the negative effect ofa high intrinsic carrier concentration. This compromise dictates the extentto which the band gap in a semiconductor can bereduced in order to enhance the THz emission. This sameanalysis can be extended to explain why the THz emissionfrom InSb is lower than that of InAs.

URL:	http://link.aps.org/doi/10.1103/PhysRevB.74.075323
DOI:	10.1103/PhysRevB.74.075323
PACS:	78.47.+p 78.47.+p Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter YEAR: 2006
KEYWORDS:	gallium compounds, indium compounds, narrow band gap semiconductors, III-V semiconductors, submillimetre wave spectra, high-speed optical techniques, carrier density

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